Datasheet > P0908ATF

P0908ATF

更新时间： 2024-11-20 17:15:39

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	172K
描述
TO-220F

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中文翻译

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数据手册

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P0908ATF 数据手册

N-Channel Enhancement Mode

Field Effect Transistor

P0908ATF

NIKO-SEM

TO-220F

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

80V

R_DS(ON)

I_D

1.GATE

2.DRAIN

3.SOURCE

9mΩ

43A

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Gate-Source Voltage

SYMBOL

LIMITS

±20

UNITS

V_GS

T_C= 25 °C

Continuous Drain Current²

I_D

T_C= 100 °C

Pulsed Drain Current^1,2

Avalanche Current

Avalanche Energy

I_DM

I_AS

160

L = 0.1mH

T_C= 25 °C

T_C= 100 °C

E_AS

120

Power Dissipation

P_D

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Case

SYMBOL

TYPICAL

MAXIMUM

UNITS

3.3

°C / W

R_JC

R_JA

Junction-to-Ambient

62.5

¹Pulse width limited by maximum junction temperature.

²Limited only by maximum temperature allowed.

ELECTRICAL CHARACTERISTICS (T_J= 25 °C, Unless Otherwise Noted)

LIMITS

UNIT

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX

STATIC

V_GS= 0V, I_D= 250A

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

3.4

V_DS= V_GS, I_D= 250A

V_DS= 0V, V_GS= ±20V

±100 nA

_DS= 64V, V_GS= 0V

A

Zero Gate Voltage Drain Current

I_DSS

V_DS= 60V, V_GS= 0V, T_J= 125 °C

F-51-1

REV1.1

12 3 4

中文翻译

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