Datasheet > P0770EI

P0770EI

更新时间： 2024-11-18 17:15:39

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	193K
描述
TO-251

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中文翻译

获取价格

数据手册

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P0770EI 数据手册

N-Channel Enhancement Mode

Field Effect Transistor

P0770EI

NIKO-SEM

TO-251

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

700V

R_DS(ON)

I_D

1. GATE

2. DRAIN

3. SOURCE

1.5Ω

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

UNITS

700

Gate-Source Voltage

V_GS

±30

T_C= 25 °C

4.4

Continuous Drain Current²

I_D

T_C= 100 °C

Pulsed Drain Current^{1 , 2}

Avalanche Current³

Avalanche Energy³

I_DM

IAS

2.2

EAS

T_C= 25 °C

Power Dissipation

P_D

T_C= 100 °C

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Case

Junction-to-Ambient

SYMBOL

TYPICAL

MAXIMUM

UNITS

°C / W

1.3

R_JC

R_JA

62.5

¹Pulse width limited by maximum junction temperature.

²Limited only by maximum temperature allowed

³VDD = 50V , L = 10mH ,starting TJ = 25˚C

ELECTRICAL CHARACTERISTICS (T_J= 25 °C, Unless Otherwise Noted)

LIMITS

MIN TYP MAX

PARAMETER

SYMBOL

TEST CONDITIONS

UNIT

STATIC

_GS= 0V, I_D= 250A

_DS= V_GS, I_D= 250A

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

700

2.9

V_DS= 0V, V_GS= ±30V

±100 nA

V_DS= 700V, V_GS= 0V , T_C= 25 °C

V_DS= 560V, V_GS= 0V , T_C= 100 °C

Gate Voltage Drain Current

I_DSS

A

REV 1.0

H-2-5

12 3 4

中文翻译

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