Datasheet > P0165EI

P0165EI

更新时间： 2024-06-26 08:51:36

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	204K
描述
TO-251

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中文翻译

获取价格

数据手册

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P0165EI 数据手册

N-Channel Enhancement Mode

Field Effect Transistor

P0165EI

NIKO-SEM

TO-251

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

650V

R_DS(ON)

I_D

1. GATE

2. DRAIN

3. SOURCE

10.6Ω

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

650

UNITS

Gate-Source Voltage

V_GS

±30

T_C= 25 °C

Continuous Drain Current²

I_D

T_C= 100 °C

0.7

Pulsed Drain Current^{1 , 2}

Avalanche Current³

Avalanche Energy³

I_DM

IAS

1.8

0.5

EAS

1.25

T_C= 25 °C

Power Dissipation

P_D

T_C= 100 °C

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Case

Junction-to-Ambient

SYMBOL

TYPICAL

MAXIMUM

UNITS

°C / W

3.4

R_JC

R_JA

62.5

¹Pulse width limited by maximum junction temperature.

²Limited only by maximum temperature allowed

³VDD = 50V , L = 10mH ,starting TJ = 25˚C

REV 1.0

F-52-5

12 3 4

中文翻译

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