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P0165ED PDF预览

P0165ED

更新时间: 2024-09-25 17:15:27
品牌 Logo 应用领域
尼克森微 - NIKOSEM /
页数 文件大小 规格书
4页 188K
描述
TO-252

P0165ED 数据手册

 浏览型号P0165ED的Datasheet PDF文件第2页浏览型号P0165ED的Datasheet PDF文件第3页浏览型号P0165ED的Datasheet PDF文件第4页 
N-Channel Enhancement Mode  
Field Effect Transistor  
P0165ED  
NIKO-SEM  
TO-252  
Halogen-Free & Lead-Free  
D
PRODUCT SUMMARY  
V(BR)DSS  
650V  
RDS(ON)  
ID  
1. GATE  
2. DRAIN  
3. SOURCE  
G
1A  
10.6Ω  
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
Drain-Source Voltage  
SYMBOL  
VDS  
LIMITS  
UNITS  
650  
V
V
Gate-Source Voltage  
VGS  
±30  
TC = 25 °C  
1
0.7  
Continuous Drain Current2  
ID  
TC = 100 °C  
A
Pulsed Drain Current1 , 2  
Avalanche Current3  
Avalanche Energy3  
IDM  
IAS  
3
0.5  
EAS  
1.25  
37  
mJ  
W
TC = 25 °C  
Power Dissipation  
PD  
TC = 100 °C  
15  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
-55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
Junction-to-Case  
Junction-to-Ambient  
SYMBOL  
TYPICAL  
MAXIMUM  
UNITS  
°C / W  
3.3  
RJC  
RJA  
62.5  
1Pulse width limited by maximum junction temperature.  
2Limited only by maximum temperature allowed  
3VDD = 50V , L = 10mH ,starting TJ = 25˚C  
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)  
LIMITS  
MIN TYP MAX  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
UNIT  
STATIC  
GS = 0V, ID = 250A  
DS = VGS, ID = 250A  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
Gate-Body Leakage  
V(BR)DSS  
VGS(th)  
IGSS  
650  
V
V
2
3.1  
4
V
VDS = 0V, VGS = ±30V  
±100 nA  
VDS = 650V, VGS = 0V , TC = 25 °C  
VDS = 520V, VGS = 0V , TC = 100 °C  
1
Gate Voltage Drain Current  
IDSS  
A  
10  
REV 1.0  
F-38-3  
1

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