Datasheet > P0150SDT

P0150SDT

更新时间： 2024-09-25 14:45:19

品牌	Logo	应用领域
捷捷微 - JJM		半导体
页数	文件大小	规格书
5页	256K
描述
半导体放电管

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数据手册

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P0150SDT 数据手册

JIEJIE MICROELECTRONICS CO. , Ltd

PxxxxSDT TSS

Rev.4.4

DESCRIPTION:

PxxxxSDT series are a type of semiconductor components.

This can be used to replace the traditional GDT and TVS

combination solution RS485, it has small dimension,

low capacitance etc.

SMC

FEATURES:

Glass passivated junction.

Excellent capability of absorbing transient surge.

Quick response to surge voltage (ns Level).

Eliminates overvoltage caused by fast rising transients.

Moisture sensitivity level: Level 1.

Symbol

UL 497B item recognized. (File No.: E480698).

IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact).

Non degenerative.

ABSOLUTE MAXIMUM RATINGS(T_A=25℃, RH=45%-75%, unless otherwise noted)

Parameter

Symbol

T_STG

T_J

Value

Unit

℃

Storage temperature range

-60 to +150

-40 to +125

Operating junction temperature range

℃

Repetitive peak pulse current

@1.2/50μs-8/20μs@2Ω

I_PP

3000

ELECTRICAL CHARACTERISTICS(T_A=25℃)

Symbol

V_DRM

I_DRM

V_S

Parameter

Peak off-state voltage

Off-state current

V‐I Curve

I^T

I^S

Switching voltage

Switching current

On-state voltage

On-state current

DRM

I_S

-V

V_T

DRM

I_T

I_H

Holding current

C_O

Off-state capacitance

-I

TEL：+86-513-83639777

-1 / 5-

http://www.jjwdz.com

12 3 4 5

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