Datasheet > P0080DM

P0080DM

更新时间： 2023-12-06 20:03:06

品牌	Logo	应用领域
捷捷微 - JJM		半导体
页数	文件大小	规格书
5页	271K
描述
半导体放电管

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P0080DM 数据手册

JIEJIE MICROELECTRONICS CO., LTD.

PxxxxDM TSS

Rev.1.3

DESCRIPTION

PxxxxDM series are a type of semiconductor component.

They are designed to protect base band equipment from

damaging overvoltage transients.

SOD-123FL

Symbol

FEATURES

 Excellent capability of absorbing transient surge.

 Quick response to surge voltage (ns Level).

 Eliminates overvoltage caused by fast rising transients.

 Moisture sensitivity level: Level 1.

 IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact).

 Non degenerative.

ABSOLUTE MAXIMUM RATINGS (T_A=25℃, RH=45%-75%, unless otherwise noted)

Parameter

Symbol

T_STG

T_J

Value

-60 to +150

-40 to +125

Unit

℃

Storage temperature range

Operating junction temperature range

Repetitive peak pulse current@10/1000μs

℃

I_PP

ELECTRICAL CHARACTERISTICS (T_A=25℃)

Symbol

V_DRM

I_DRM

V_S

Parameter

Peak off-state voltage

Off-state current

V‐I Curve

I^T

I^S

Switching voltage

Switching current

On-state voltage

On-state current

DRM

I_S

-V

V_T

DRM

I_T

I_H

Holding current

-I

C_O

Off-state capacitance

TEL：+86-513-83639777

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http://www.jjwdz.com

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