Datasheet > P-TO263-3-2

P-TO263-3-2

更新时间： 2024-09-25 02:58:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
10页	251K
描述
Cool MOS™ Power Transistor

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中文翻译

获取价格

数据手册

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P-TO263-3-2 数据手册

SPP03N60S5

SPB03N60S5

Final data

Cool MOS™ Power Transistor

600

1.4

3.2

Ω

Feature

DS(on)

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

P-TO263-3-2

P-TO220-3-1

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

Type

Package

Ordering Code

Marking

SPP03N60S5

P-TO220-3-1 Q67040-S4184

03N60S5

SPB03N60S5

P-TO263-3-2 Q67040-S4197

03N60S5

Maximum Ratings

Parameter

Symbol

Value

Unit

Continuous drain current

T = 25 °C

3.2

T = 100 °C

5.7

100

Pulsed drain current, t limited by T

Avalanche energy, single pulse

jmax

D puls

I = 2.4 A, V = 50 V

Avalanche energy, repetitive t limited by T

jmax

0.2

3.2

I = 3.2 A, V = 50 V

Avalanche current, repetitive t limited by T

Gate source voltage

jmax AR

±20

±30

Gate source voltage AC (f >1Hz)

tot

°C

Power dissipation, T = 25°C

Operating and storage temperature

T , T

-55... +150

stg

Page 1

2003-10-06

12 3 4 5 6 7...10

中文翻译

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