Datasheet > OSG65R380FEF

OSG65R380FEF

更新时间： 2025-07-23 19:25:23

品牌	Logo	应用领域
东微 - ORIENTAL SEMI		/
页数	文件大小	规格书
9页	907K
描述
元器件封装:TO-220F;

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OSG65R380FEF 数据手册

OSG65R380FEF

Enhancement Mode N-Channel Power MOSFET

General Description

The GreenMOS^®high voltage MOSFET utilizes charge balance technology to achieve outstanding

low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide

superior switching performance and robust avalanche capability.

The GreenMOS^®E series is optimized for its switching characteristics to achieve balance between

EMI and efficiency. It is designed to enable power supply systems to reach the highest efficiency

while still meeting EMI standards.

Features



Low R_DS(ON)& FOM

Extremely low switching loss

Excellent stability and uniformity

EMI and performance balanced

Applications



LED lighting

Charger

Adapter

TV power

Telecom power

Server power

Solar/UPS

Key Performance Parameters

Parameter

V_{DS, min}@ T_j(max)

I_{D, pulse}

Value

700

Unit

R_{DS(ON), max}@ V_GS=10V

Q_g

380

mΩ

Marking Information

Product Name

Package

Marking

OSG65R380FEF

TO220F

OSG65R380FE

Package & Pin Information

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