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OSC-13SH PDF预览

OSC-13SH

更新时间: 2024-11-10 22:27:51
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 21K
描述
NPN SILICON RF POWER TRANSISTOR

OSC-13SH 数据手册

  
OSC-1.3SH  
NPN SILICON RF POWER TRANSISTOR  
PACKAGE STYLE .250 2L FLG  
A
ØD  
DESCRIPTION:  
.060 x 45°  
CHAMFER  
C
B
E
The ASI OSC-1.3SH is Designed for  
F
G
H
FEATURES:  
I
J
K
L
P
·
N
M
·
· Omnigold™ Metalization System  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
.028 / 0.71  
.740 / 18.80  
.245 / 6.22  
.128 / 3.25  
.032 / 0.81  
A
B
C
D
E
F
G
H
I
MAXIMUM RATINGS  
.255 / 6.48  
.132 / 3.35  
700 mA  
IC  
.125 / 3.18  
.117 / 2.97  
.110 / 2.79  
.117 / 2.97  
30 V  
VCC  
PDISS  
TJ  
.560 / 14.22  
.790 / 20.07  
.225 / 5.72  
.165 / 4.19  
.003 / 0.08  
.058 / 1.47  
.119 / 3.02  
.149 / 3.78  
.570 / 14.48  
.810 / 20.57  
.235 / 5.97  
.185 / 4.70  
.007 / 0.18  
.068 / 1.73  
.135 / 3.43  
.187 / 4.75  
17.6 W @ TC £ 50 OC  
-65 OC to +200 OC  
-65 OC to +200 OC  
8.5 OC/W  
J
K
L
M
N
P
TSTG  
qJC  
ORDER CODE: ASI10638  
CHARACTERISTICS TC = 25 OC  
SYMBOL  
BVCBO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 1.0 mA  
IC = 5.0 mA  
IE = 1.0 mA  
VCB = 28 V  
VCE = 5.0 V  
45  
V
BVCER  
BVEBO  
ICBO  
RBE = 10 W  
45  
V
3.5  
V
0.5  
mA  
---  
hFE  
IC = 500 mA  
ICQ = 200 mA  
30  
300  
COB  
VCB = 28 V  
f = 1.0 MHz  
f = 2.7 GHz  
12  
pF  
VCC = 21 V  
4.5  
PG  
dB  
%
hC  
POUT = 1.3 W  
30  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004  
1/1  
Specifications are subject to change without notice.  

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