HL8340MG
GaAlAs Laser Diode
ODE-208-067A (Z)
Rev.1
May 24, 2007
Description
The HL8340MG is 0.85 µm band GaAlAs laser diode with a multi-quantum well(MQW) structure. It is suitable as a
light source for sensor applications and various other types of optical equipment.
Features
Package Type
• HL8340MG: MG
Internal Circuit
•
•
•
•
•
•
Infrared light output: λp = 852 nm Typ
Optical output power: 50 mW (CW)
Low operating current: 75 mA Typ
Low operating voltage: 1.9 V Typ
Built-in monitor photodiode
1
3
PD
LD
Single longitudinal mode
2
Absolute Maximum Ratings
(TC = 25°C)
Item
Optical output power
LD reverse voltage
Symbol
Ratings
Unit
mW
V
PO
50
2
VR(LD)
PD reverse voltage
Operating temperature
Storage temperature
VR(PD)
Topr
Tstg
30
V
–10 to +60
–40 to +85
°C
°C
Optical and Electrical Characteristics
(TC = 25°C)
Item
Threshold current
Slope efficiency
Operating current
Operating voltage
Symbol
Ith
Min
—
Typ
20
0.9
75
1.9
9
Max
Unit
Test Conditions
40
—
mA
—
ηs
0.7
—
mW/mA 30 (mW)/(I(40mW) – I(10mW))
IOP
VOP
θ//
100
2.0
12
mA
V
PO = 50 mW
—
PO = 50 mW
Beam divergence
6
°
PO = 50 mW, FWHM
parallel to the junction
Beam divergence
perpendicular to the junction
θ⊥
18
22
26
°
PO = 50 mW, FWHM
PO = 50 mW
Lasing wavelength
Monitor current
λp
842
—
852
862
—
nm
mA
IS
0.25
PO = 50 mW, VR(PD) = 5 V
Rev.1 May 24, 2007 page 1 of 4