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HL8337MG PDF预览

HL8337MG

更新时间: 2024-01-04 09:27:47
品牌 Logo 应用领域
OPNEXT 半导体光电二极管激光二极管
页数 文件大小 规格书
4页 93K
描述
GaAlAs Laser Diode

HL8337MG 技术参数

生命周期:ActiveReach Compliance Code:unknown
Factory Lead Time:12 weeks 6 days风险等级:5.58
配置:SINGLE WITH BUILT-IN PHOTO DIODE功能数量:1
最高工作温度:60 °C最低工作温度:-10 °C
光电设备类型:LASER DIODE标称输出功率:50 mW
峰值波长:830 nm形状:ROUND
尺寸:1.6 mm最大阈值电流:40 mA
Base Number Matches:1

HL8337MG 数据手册

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HL8337MG  
GaAlAs Laser Diode  
ODE-208-065A (Z)  
Rev.1  
May 24, 2007  
Description  
The HL8337MG is 0.83 µm band GaAlAs laser diode with a multi-quantum well(MQW) structure. It is suitable as a  
light source for sensor applications and various other types of optical equipment.  
Features  
Package Type  
HL8337MG: MG  
Internal Circuit  
Infrared light output: λp = 830 nm Typ  
Optical output power: 50 mW (CW)  
Low operating current: 75 mA Typ  
Low operating voltage: 1.9 V Typ  
Built-in monitor photodiode  
1
3
PD  
LD  
Single longitudinal mode  
2
Absolute Maximum Ratings  
(TC = 25°C)  
Item  
Optical output power  
LD reverse voltage  
Symbol  
Ratings  
Unit  
mW  
V
PO  
50  
2
VR(LD)  
PD reverse voltage  
Operating temperature  
Storage temperature  
VR(PD)  
Topr  
Tstg  
30  
V
–10 to +60  
–40 to +85  
°C  
°C  
Optical and Electrical Characteristics  
(TC = 25°C)  
Item  
Threshold current  
Slope efficiency  
Operating current  
Operating voltage  
Symbol  
Ith  
Min  
Typ  
20  
0.9  
75  
1.9  
9
Max  
Unit  
Test Conditions  
40  
mA  
ηs  
0.7  
mW/mA 30 (mW)/(I(40mW) – I(10mW))  
IOP  
VOP  
θ//  
100  
2.4  
12  
mA  
V
PO = 50 mW  
PO = 50 mW  
Beam divergence  
6
°
PO = 50 mW, FWHM  
parallel to the junction  
Beam divergence  
perpendicular to the junction  
θ⊥  
18  
22  
26  
°
PO = 50 mW, FWHM  
PO = 50 mW  
Lasing wavelength  
Monitor current  
λp  
820  
830  
840  
nm  
mA  
IS  
0.25  
PO = 50 mW, VR(PD) = 5 V  
Rev.1 May 24, 2007 page 1 of 4  

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