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HL8337MG PDF预览

HL8337MG - OPNEXT. INC.

半导体光电二极管激光二极管
型号:
HL8337MG
Datasheet下载:
HL8337MG
HL8337MG描述:
GaAlAs Laser Diode
HL8337MG应用:
半导体光电二极管激光二极管
文档页数/大小:
4页 / 93K
品牌Logo:
品牌名称:
OPNEXT [ OPNEXT. INC. ]

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HL8337MG

应用: 半导体光电二极管激光二极管

文档: 4页 / 93K

品牌: OPNEXT

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  • HL8337MG参数
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生命周期
Active
IHS 制造商
USHIO OPTO SEMICONDUCTORS INC
Reach Compliance Code
unknown
Factory Lead Time
12 weeks 6 days
风险等级
5.58
配置
SINGLE WITH BUILT-IN PHOTO DIODE
功能数量
1
最高工作温度
60 °C
最低工作温度
-10 °C
光电设备类型
LASER DIODE
标称输出功率
50 mW
峰值波长
830 nm
形状
ROUND
尺寸
1.6 mm
最大阈值电流
40 mA
Base Number Matches
1
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HL8337MG
GaAlAs Laser Diode
Description
The HL8337MG is 0.83
µm
band GaAlAs laser diode with a multi-quantum well(MQW) structure. It is suitable as a
light source for sensor applications and various other types of optical equipment.
ODE-208-065A (Z)
Rev.1
May 24, 2007
Features
Infrared light output:
λp
= 830 nm Typ
Optical output power: 50 mW (CW)
Low operating current: 75 mA Typ
Low operating voltage: 1.9 V Typ
Built-in monitor photodiode
Single longitudinal mode
Package Type
HL8337MG: MG
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Symbol
P
O
V
R(LD)
V
R(PD)
Topr
Tstg
Ratings
50
2
30
–10 to +60
–40 to +85
Unit
mW
V
V
°C
°C
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Threshold current
Slope efficiency
Operating current
Operating voltage
Beam divergence
parallel to the junction
Beam divergence
perpendicular to the junction
Lasing wavelength
Monitor current
Symbol
Ith
ηs
I
OP
V
OP
θ//
θ⊥
λp
I
S
Min
0.7
6
18
820
Typ
20
0.9
75
1.9
9
22
830
0.25
Max
40
100
2.4
12
26
840
Unit
mA
mW/mA
mA
V
°
°
nm
mA
Test Conditions
30 (mW)/(I
(40mW)
– I
(10mW)
)
P
O
= 50 mW
P
O
= 50 mW
P
O
= 50 mW, FWHM
P
O
= 50 mW, FWHM
P
O
= 50 mW
P
O
= 50 mW, V
R(PD)
= 5 V
Rev.1 May 24, 2007 page 1 of 4

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