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HL8333G PDF预览

HL8333G

更新时间: 2024-02-13 03:24:42
品牌 Logo 应用领域
OPNEXT 二极管激光二极管
页数 文件大小 规格书
4页 94K
描述
GaAlAs Laser Diode

HL8333G 技术参数

生命周期:Obsolete包装说明:LD/DG, 3 PIN
Reach Compliance Code:unknown风险等级:5.61
Is Samacsys:N配置:SINGLE WITH BUILT-IN PHOTO DIODE
功能数量:1最高工作温度:60 °C
最低工作温度:-10 °C光电设备类型:LASER DIODE
标称输出功率:40 mW峰值波长:830 nm
形状:ROUND尺寸:1.6 mm
最大阈值电流:70 mABase Number Matches:1

HL8333G 数据手册

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HL8333G  
GaAlAs Laser Diode  
ODE-208-014C (Z)  
Rev.3  
Jun. 13, 2006  
Description  
The HL8333G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. It is  
suitable as a light source for optical disk memories, card readers and various other types of optical equipment.  
Features  
Package Type  
HL8333G: G2  
Internal Circuit  
Infrared light output: λp = 820 to 840 nm  
High power:  
1
3
standard continuous operation at 40 mW (CW),  
pulsed operation at 50 mW  
PD  
LD  
Built-in monitor photodiode  
Single longitudinal mode  
2
Absolute Maximum Ratings  
(TC = 25°C)  
Item  
Optical output power  
Pulse optical output power  
LD reverse voltage  
Symbol  
Ratings  
Unit  
mW  
mW  
V
PO  
40  
50 *  
PO(pulse)  
VR(LD)  
VR(PD)  
Topr  
2
PD reverse voltage  
30  
V
Operating temperature  
Storage temperature  
–10 to +60  
–40 to +85  
°C  
Tstg  
°C  
Note: Pulse condition : Pulse width = 1 µs, duty = 50%  
Optical and Electrical Characteristics  
(TC = 25°C)  
Item  
Threshold current  
Slope efficiency  
Operating current  
Symbol  
Ith  
Min  
Typ  
40  
Max  
Unit  
Test Conditions  
70  
0.9  
160  
14  
mA  
ηs  
IOP  
θ//  
0.4  
0.5  
120  
10  
mW/mA 24 (mW) / (I(32mW) – I(8mW))  
mA  
°
PO = 40 mW  
Beam divergence  
7
PO = 40 mW, FWHM  
parallel to the junction  
Beam divergence  
θ⊥  
18  
22  
32  
°
PO = 40 mW, FWHM  
perpendicular to the junction  
Astigmatism  
AS  
λp  
IS  
820  
20  
5
µm  
nm  
µA  
PO = 4 mW, NA = 0.4  
PO = 40 mW  
Lasing wavelength  
Monitor current  
830  
100  
840  
130  
PO = 4 mW, VR(PD) = 5 V  
Rev.3 Jun. 13, 2006 page 1 of 4  

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