HL8333G
GaAlAs Laser Diode
ODE-208-014C (Z)
Rev.3
Jun. 13, 2006
Description
The HL8333G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. It is
suitable as a light source for optical disk memories, card readers and various other types of optical equipment.
Features
Package Type
• HL8333G: G2
Internal Circuit
•
•
Infrared light output: λp = 820 to 840 nm
High power:
1
3
standard continuous operation at 40 mW (CW),
pulsed operation at 50 mW
PD
LD
•
•
Built-in monitor photodiode
Single longitudinal mode
2
Absolute Maximum Ratings
(TC = 25°C)
Item
Optical output power
Pulse optical output power
LD reverse voltage
Symbol
Ratings
Unit
mW
mW
V
PO
40
50 *
PO(pulse)
VR(LD)
VR(PD)
Topr
2
PD reverse voltage
30
V
Operating temperature
Storage temperature
–10 to +60
–40 to +85
°C
Tstg
°C
Note: Pulse condition : Pulse width = 1 µs, duty = 50%
Optical and Electrical Characteristics
(TC = 25°C)
Item
Threshold current
Slope efficiency
Operating current
Symbol
Ith
Min
—
Typ
40
Max
Unit
Test Conditions
70
0.9
160
14
mA
—
ηs
IOP
θ//
0.4
—
0.5
120
10
mW/mA 24 (mW) / (I(32mW) – I(8mW))
mA
°
PO = 40 mW
Beam divergence
7
PO = 40 mW, FWHM
parallel to the junction
Beam divergence
θ⊥
18
22
32
°
PO = 40 mW, FWHM
perpendicular to the junction
Astigmatism
AS
λp
IS
—
820
20
5
—
µm
nm
µA
PO = 4 mW, NA = 0.4
PO = 40 mW
Lasing wavelength
Monitor current
830
100
840
130
PO = 4 mW, VR(PD) = 5 V
Rev.3 Jun. 13, 2006 page 1 of 4