Datasheet > HL8325G

HL8325G

更新时间： 2024-02-25 11:53:30

品牌	Logo	应用领域
OPNEXT		半导体光电二极管激光二极管
页数	文件大小	规格书
4页	93K
描述
GaAlAs Laser Diode

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技术参数
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HL8325G 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.61	Is Samacsys：	N
光电设备类型：	LASER DIODE	Base Number Matches：	1

HL8325G 数据手册

HL8325G

GaAlAs Laser Diode

ODE-208-048A (Z)

Rev.1

May 08, 2007

Description

The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its

internal circuit configuration is suitable for operation on a single positive supply voltage. It is suitable as a light

source for optical disk memories, card readers and various other types of optical equipment.

Features

Package Type

• HL8325G: G2

Internal Circuit

•

Infrared light output: λp = 820 to 840 nm

High power: standard continuous operation at

40 mW (CW), pulsed operation at 50 mW

Built-in monitor photodiode

•

Single longitudinal mode

Absolute Maximum Ratings

(T_C= 25°C)

Item

Optical output power

Symbol

Ratings

Unit

P_O

50 *

Pulse optical output power

Laser diode reverse voltage

Photo diode reverse voltage

Operating temperature

Storage temperature

P_O(pulse)

V_R(LD)

V_R(PD)

Topr

–10 to +60

–40 to +85

°C

Tstg

°C

Note: Pulse condition : Pulse width = 1 µs, duty = 50%

Optical and Electrical Characteristics

(T_C= 25°C)

Item

Threshold current

Slope efficiency

Symbol

Ith

Min

—

Typ

Max

Unit

Test Conditions

—

ηs

θ//

0.4

0.5

0.9

mW/mA 24 (mW) / (I_(32mW)– I_(8mW))

Beam divergence

P_O= 40 mW, FWHM

parallel to the junction

Beam divergence

θ⊥

P_O= 40 mW, FWHM

parpendicular to the junction

Asitgmatism

A_S

λp

I_S

—

820

—

µm

µA

P_O= 4 mW, NA = 0.4

P_O= 40 mW

Lasing wavelength

Monitor current

830

840

130

P_O= 4 mW, V_R(PD)= 5 V

Rev.1 May 08, 2007 page 1 of 4

12 3 4

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