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HL6750MG PDF预览

HL6750MG

更新时间: 2024-02-22 14:44:10
品牌 Logo 应用领域
OPNEXT 光电二极管激光二极管
页数 文件大小 规格书
4页 94K
描述
Visible High Power Laser Diode

HL6750MG 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.53配置:SINGLE WITH BUILT-IN PHOTO DIODE
功能数量:1最高工作温度:70 °C
最低工作温度:-10 °C光电设备类型:LASER DIODE
标称输出功率:55 mW峰值波长:685 nm
形状:ROUND尺寸:1.6 mm
最大阈值电流:60 mABase Number Matches:1

HL6750MG 数据手册

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HL6750MG  
Visible High Power Laser Diode  
ODE-208-021A (Z)  
Rev.1  
Dec. 21, 2006  
Description  
The HL6750MG is a 0.68 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is  
suitable as a light source for various other types of optical equipment.  
Features  
Package Type  
HL6750MG: MG  
Internal Circuit  
High output power  
Small package  
Visible light output  
Single longitudinal mode  
Low operating current : 75 mA typ  
Low operating voltage : 2.3 V typ  
: 50 mW (CW)  
: φ 5.6 mm  
: λp = 685 nm Typ  
1
3
PD  
LD  
2
Absolute Maximum Ratings  
(TC = 25°C)  
Item  
Optical output power  
Symbol  
Ratings  
Unit  
mW  
V
PO  
55  
2
Laser diode reverse voltage  
Photo diode reverse voltage  
Operating temperature  
Storage temperature  
VR(LD)  
VR(PD)  
Topr  
Tstg  
30  
V
–10 to +70  
–40 to +85  
°C  
°C  
Optical and Electrical Characteristics  
(TC = 25°C)  
Item  
Threshold current  
Operating voltage  
Slope efficiency  
Operating current  
Symbol  
Ith  
Min  
Typ  
30  
2.3  
1.1  
75  
9
Max  
60  
Unit  
Test Conditions  
mA  
V
VOP  
ηs  
3.0  
1.4  
120  
12  
PO = 50 mW  
0.8  
mW/mA 30(mW) / (I(40mW) – I(10mW))  
IOP  
θ//  
mA  
°
PO = 50 mW  
PO = 50 mW  
Beam divergence  
7
parallel to the junction  
Beam divergence  
perpendicular to the junction  
θ⊥  
18  
21  
25  
°
PO = 50 mW  
PO = 50 mW  
Lasing wavelength  
Monitor current  
Astigmatism  
λp  
IS  
675  
0.08  
685  
0.15  
1
695  
0.35  
nm  
mA  
µm  
PO = 50 mW, VR(PD) = 5 V  
PO = 5 mW, NA = 0.55  
AS  
Rev.1 Dec. 21, 2006 page 1 of 4  

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