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HL6750MG PDF预览

HL6750MG - OPNEXT. INC.

光电二极管激光二极管
型号:
HL6750MG
Datasheet下载:
HL6750MG
HL6750MG描述:
Visible High Power Laser Diode
HL6750MG应用:
光电二极管激光二极管
文档页数/大小:
4页 / 94K
品牌Logo:
品牌名称:
OPNEXT [ OPNEXT. INC. ]

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HL6750MG

应用: 光电二极管激光二极管

文档: 4页 / 94K

品牌: OPNEXT

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  • HL6750MG参数
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生命周期
Active
Reach Compliance Code
unknown
风险等级
5.53
配置
SINGLE WITH BUILT-IN PHOTO DIODE
功能数量
1
最高工作温度
70 °C
最低工作温度
-10 °C
光电设备类型
LASER DIODE
标称输出功率
55 mW
峰值波长
685 nm
形状
ROUND
尺寸
1.6 mm
最大阈值电流
60 mA
Base Number Matches
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HL6750MG
Visible High Power Laser Diode
Description
The HL6750MG is a 0.68
µm
band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is
suitable as a light source for various other types of optical equipment.
ODE-208-021A (Z)
Rev.1
Dec. 21, 2006
Features
High output power
: 50 mW (CW)
Small package
:
φ
5.6 mm
Visible light output
:
λp
= 685 nm Typ
Single longitudinal mode
Low operating current : 75 mA typ
Low operating voltage : 2.3 V typ
Package Type
HL6750MG: MG
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Optical output power
Laser diode reverse voltage
Photo diode reverse voltage
Operating temperature
Storage temperature
Symbol
P
O
V
R(LD)
V
R(PD)
Topr
Tstg
Ratings
55
2
30
–10 to +70
–40 to +85
Unit
mW
V
V
°C
°C
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Threshold current
Operating voltage
Slope efficiency
Operating current
Beam divergence
parallel to the junction
Beam divergence
perpendicular to the junction
Lasing wavelength
Monitor current
Astigmatism
Symbol
Ith
V
OP
ηs
I
OP
θ//
θ⊥
λp
I
S
A
S
Min
0.8
7
18
675
0.08
Typ
30
2.3
1.1
75
9
21
685
0.15
1
Max
60
3.0
1.4
120
12
25
695
0.35
Unit
mA
V
mW/mA
mA
°
°
nm
mA
µm
Test Conditions
P
O
= 50 mW
30(mW) / (I
(40mW)
– I
(10mW)
)
P
O
= 50 mW
P
O
= 50 mW
P
O
= 50 mW
P
O
= 50 mW
P
O
= 50 mW, V
R(PD)
= 5 V
P
O
= 5 mW, NA = 0.55
Rev.1 Dec. 21, 2006 page 1 of 4

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