HL6740FG
Dual Beam Visible Laser Diode
ODE-208-024 (Z)
Rev.0
Feb. 24, 2006
Description
The HL6740FG is a 0.67 µm band AlGaInP laser diode with a multi-quantum well (MQW) structure. It is an array of
two individual beams on one chip. Therefore, it is suitable as a light source for a high-speed printer, such as PPC and
LBP, and so on.
Features
Package Type
• HL6740FG: FG
Internal Circuit
•
•
•
Continuous operating output to each beam: 5 mW CW
Visible light output: 675 nm Typ
Difference of wavelength between 2 beams
: 3 nm Max
1
4
3
LD
B
PD
LD
A
•
Low threshold current: 35 mA Typ
2
Absolute Maximum Ratings
(TC = 25°C)
Item
Optical output power
Pulse optical output power
LD reverse voltage
Symbol
Ratings
Unit
mW
mW
V
PO
5
PO(pulse)
VR(LD)
VR(PD)
Topr
6*
2
PD reverse voltage
30
V
Operating temperature
Storage temperature
–10 to +50
–40 to +85
°C
Tstg
°C
Note: Pulse condition : Pulse width ≤ 1 µs, duty ≤ 50%
Optical and Electrical Characteristics
(TC = 25°C)
Item
Threshold current
LD Operating current
LD Operating voltage
Slope efficiency
Symbol
Ith
Min
—
Typ
35
—
Max
50
Unit
Test Conditions
mA
mA
V
—
IOP
VOP
ηs
—
75
PO = 5 mW
PO = 5 mW
—
2.3
0.4
8
2.7
0.6
11
0.2
6.5
mW/mA 3 (mW) / (I(4mW) – I(1mW))
Beam divergence
θ//
°
PO = 5 mW
parallel to the junction
Beam divergence
θ⊥
20
30
36
°
PO = 5 mW
perpendicular to the junction
Lasing wavelength
Difference of wavelength *2
Monitor current
λp
∆λp
Is
665
—
675
—
680
3.0
4.0
nm
nm
mA
PO = 5 mW
PO = 5 mW
1.0
—
PO = 5 mW, VR(RD) = 5V
Notes: 1. The characteristics are specified under the condition of a single beam operation unless otherwise specified.
2. ∆λp is specified as absolute value of the difference between two beams operated every beam.
Rev.0 Feb. 24, 2006 page 1 of 4