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HL6738MG PDF预览

HL6738MG

更新时间: 2024-01-17 01:23:55
品牌 Logo 应用领域
OPNEXT 半导体光电二极管激光二极管
页数 文件大小 规格书
4页 94K
描述
Visible High Power Laser Diode

HL6738MG 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.59光电设备类型:LASER DIODE
Base Number Matches:1

HL6738MG 数据手册

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HL6738MG  
Visible High Power Laser Diode  
ODE-208-047 (Z)  
Rev.0  
Sept. 25, 2006  
Description  
The HL6738MG is a 0.68 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is  
suitable as a light source for various other types of optical equipment.  
Features  
Package Type  
HL6738MG: MG  
Internal Circuit  
High output power  
Visible light output  
Small package  
Low astigmatism  
Single longitudinal mode  
: 35 mW (CW)  
: λp = 690 nm Typ  
: φ 5.6 mm  
1
3
: 6 µm Typ (PO = 5 mW)  
PD  
LD  
2
Absolute Maximum Ratings  
(TC = 25°C)  
Item  
Optical output power  
Symbol  
Ratings  
Unit  
mW  
mW  
V
PO  
35  
50 *  
Pulse optical output power  
Laser diode reverse voltage  
Photo diode reverse voltage  
Operating temperature  
Storage temperature  
PO(pulse)  
VR(LD)  
VR(PD)  
Topr  
2
30  
V
–10 to +70  
–40 to +85  
°C  
Tstg  
°C  
Note: Pulse condition : Pulse width = 100 ns, duty = 50%  
Optical and Electrical Characteristics  
(TC = 25°C)  
Item  
Threshold current  
Operating voltage  
Slope efficiency  
Symbol  
Ith  
Min  
30  
Typ  
45  
Max  
70  
Unit  
Test Conditions  
mA  
V
VOP  
ηs  
2.1  
0.5  
7
2.5  
0.7  
8.5  
2.8  
PO = 30 mW  
0.9  
mW/mA 18(mW) / (I(24mW) – I(6mW))  
Beam divergence  
θ//  
10.5  
°
PO = 30 mW  
parallel to the junction  
Beam divergence  
θ⊥  
17  
19  
23  
°
PO = 30 mW  
parpendicular to the junction  
Asitgmatism  
AS  
λp  
IS  
6
µm  
nm  
mA  
PO = 5 mW, NA = 0.55  
PO = 30 mW  
Lasing wavelength  
Monitor current  
680  
0.02  
690  
0.1  
695  
0.45  
PO = 30 mW, VR(PD) = 5 V  
Rev.0 Sept. 25, 2006 page 1 of 4  

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