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HL6724MG PDF预览

HL6724MG - OPNEXT. INC.

半导体光电二极管激光二极管
型号:
HL6724MG
Datasheet下载:
HL6724MG
HL6724MG描述:
AlGaInP Laser Diode
HL6724MG应用:
半导体光电二极管激光二极管
文档页数/大小:
4页 / 93K
品牌Logo:
品牌名称:
OPNEXT [ OPNEXT. INC. ]

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HL6724MG

应用: 半导体光电二极管激光二极管

文档: 4页 / 93K

品牌: OPNEXT

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生命周期
Obsolete
IHS 制造商
RENESAS ELECTRONICS CORP
包装说明
LD/MG, 3 PIN
Reach Compliance Code
compliant
风险等级
5.02
Is Samacsys
N
配置
SINGLE WITH BUILT-IN PHOTO DIODE
功能数量
1
最高工作温度
50 °C
最低工作温度
-10 °C
光电设备类型
LASER DIODE
标称输出功率
5 mW
峰值波长
670 nm
形状
ROUND
最大阈值电流
35 mA
Base Number Matches
1
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HL6724MG
AlGaInP Laser Diode
Description
The HL6724MG is a 0.67
µm
band AlGaInP laser diode with a multi-quantum well (MQW) structure. It is suitable as a
light source for laser pointers and optical equipments for amusement.
ODE-208-046 (Z)
Rev.0
Oct. 17, 2006
Features
Visible light output: 670 nm Typ
Single longitudinal mode
Optical output power: 5 mW CW
Low operating current: 35 mA Typ
Low operating voltage: 2.7 V Max
Package Type
HL6724MG: MG
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Optical output power
Pulse optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Symbol
P
O
P
O(pulse)
V
R(LD)
V
R(PD)
Topr
Ratings
5
6*
2
30
–10 to +50
–40 to +85
Unit
mW
mW
V
V
°C
°C
Storage temperature
Tstg
Note: Pulse condition : Pulse width
1
µs
, duty
50%
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Threshold current
LD operating current
LD operating voltage
Beam divergence
parallel to the junction
Beam divergence
parpendicular to the junction
Astigmatism
Lasing wavelength
Monitor current
Symbol
Ith
I
OP
V
OP
θ//
θ⊥
A
S
λp
I
S
Min
5
22
660
0.4
Typ
25
35
8
30
5
670
0.9
Max
35
50
2.7
11
40
680
2.0
Unit
mA
mA
V
°
°
µm
nm
mA
Test Conditions
P
O
= 5 mW
P
O
= 5 mW
P
O
= 5 mW, FWHM
P
O
= 5 mW, FWHM
P
O
= 5 mW, NA = 0.55
P
O
= 5 mW
P
O
= 5 mW, V
R(PD)
= 5 V
Rev.0 Oct . 17, 2006 page 1 of 4

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