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HL6714G PDF预览

HL6714G

更新时间: 2024-01-10 08:20:20
品牌 Logo 应用领域
OPNEXT 半导体光电二极管激光二极管
页数 文件大小 规格书
4页 93K
描述
AlGaInP Laser Diode

HL6714G 技术参数

生命周期:Active包装说明:HERMETIC SEALED, LD/G2, 3 PIN
Reach Compliance Code:unknownFactory Lead Time:12 weeks 6 days
风险等级:5.02配置:SINGLE WITH BUILT-IN PHOTO DIODE
功能数量:1最高工作温度:50 °C
最低工作温度:-10 °C光电设备类型:LASER DIODE
标称输出功率:10 mW峰值波长:670 nm
形状:ROUND尺寸:2 mm
最大阈值电流:60 mABase Number Matches:1

HL6714G 数据手册

 浏览型号HL6714G的Datasheet PDF文件第2页浏览型号HL6714G的Datasheet PDF文件第3页浏览型号HL6714G的Datasheet PDF文件第4页 
HL6714G  
AlGaInP Laser Diode  
ODE-208-044 (Z)  
Rev.0  
Oct. 17, 2006  
Description  
The HL6714G is a 0.67 µm band AlGaInP index-guided laser diode with a multi-quantum well (MQW) structure. It is  
suitable as a light source for laser beam printers, levelers and various other types of optical equipment. Hermetic  
sealing of the package assures high reliability.  
Features  
Package Type  
HL6714G: G2  
Internal Circuit  
Visible light output at wavelengths up to 680 nm  
Single longitudinal mode  
High output power: 10 mW (CW)  
Built-in monitor photodiode  
1
3
PD  
LD  
2
Absolute Maximum Ratings  
(TC = 25°C)  
Item  
Optical output power  
Pulse optical output power  
LD reverse voltage  
Symbol  
Ratings  
Unit  
mW  
mW  
V
PO  
10  
12 *  
PO(pulse)  
VR(LD)  
VR(PD)  
Topr  
2
PD reverse voltage  
30  
V
Operating temperature  
Storage temperature  
–10 to +50  
–40 to +85  
°C  
Tstg  
°C  
Note: Pulse condition : Pulse width 1 µs , duty 50%  
Optical and Electrical Characteristics  
(TC = 25°C)  
Item  
Threshold current  
LD operating voltage  
Slope efficiency  
Symbol  
Ith  
Min  
20  
Typ  
35  
Max  
60  
Unit  
Test Conditions  
mA  
V
VOP  
ηs  
2.7  
0.8  
11  
PO = 10 mW  
0.3  
5
0.5  
8
mW/mA 6 (mW) / (I(8mW) – I(2mW))  
Beam divergence  
θ//  
°
PO = 10 mW, FWHM  
parallel to the junction  
Beam divergence  
θ⊥  
18  
22  
30  
°
PO = 10 mW, FWHM  
parpendicular to the junction  
Astigmatism  
AS  
λp  
IS  
660  
0.3  
10  
670  
0.8  
680  
1.5  
µm  
nm  
mA  
PO = 10 mW, NA = 0.55  
PO = 10 mW  
Lasing wavelength  
Monitor current  
PO = 10 mW, VR(PD) = 5 V  
Rev.0 Oct. 17, 2006 page 1 of 4  

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