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HL6714G PDF预览
型号:
HL6714G
Datasheet下载:
HL6714G
HL6714G描述:
AlGaInP Laser Diode
HL6714G应用:
半导体光电二极管激光二极管
文档页数/大小:
4页 / 93K
品牌Logo:
品牌名称:
OPNEXT [ OPNEXT. INC. ]

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HL6714G

应用: 半导体光电二极管激光二极管

文档: 4页 / 93K

品牌: OPNEXT

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生命周期
Active
包装说明
HERMETIC SEALED, LD/G2, 3 PIN
Reach Compliance Code
unknown
Factory Lead Time
12 weeks 6 days
风险等级
5.02
配置
SINGLE WITH BUILT-IN PHOTO DIODE
功能数量
1
最高工作温度
50 °C
最低工作温度
-10 °C
光电设备类型
LASER DIODE
标称输出功率
10 mW
峰值波长
670 nm
形状
ROUND
尺寸
2 mm
最大阈值电流
60 mA
Base Number Matches
1
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HL6714G
AlGaInP Laser Diode
Description
The HL6714G is a 0.67
µm
band AlGaInP index-guided laser diode with a multi-quantum well (MQW) structure. It is
suitable as a light source for laser beam printers, levelers and various other types of optical equipment. Hermetic
sealing of the package assures high reliability.
ODE-208-044 (Z)
Rev.0
Oct. 17, 2006
Features
Visible light output at wavelengths up to 680 nm
Single longitudinal mode
High output power: 10 mW (CW)
Built-in monitor photodiode
Package Type
HL6714G: G2
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Optical output power
Pulse optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Symbol
P
O
P
O(pulse)
V
R(LD)
V
R(PD)
Topr
Ratings
10
12 *
2
30
–10 to +50
–40 to +85
Unit
mW
mW
V
V
°C
°C
Storage temperature
Tstg
Note: Pulse condition : Pulse width
1
µs
, duty
50%
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Threshold current
LD operating voltage
Slope efficiency
Beam divergence
parallel to the junction
Beam divergence
parpendicular to the junction
Astigmatism
Lasing wavelength
Monitor current
Symbol
Ith
V
OP
ηs
θ//
θ⊥
A
S
λp
I
S
Min
20
0.3
5
18
660
0.3
Typ
35
0.5
8
22
10
670
0.8
Max
60
2.7
0.8
11
30
680
1.5
Unit
mA
V
mW/mA
°
°
µm
nm
mA
Test Conditions
P
O
= 10 mW
6 (mW) / (I
(8mW)
– I
(2mW)
)
P
O
= 10 mW, FWHM
P
O
= 10 mW, FWHM
P
O
= 10 mW, NA = 0.55
P
O
= 10 mW
P
O
= 10 mW, V
R(PD)
= 5 V
Rev.0 Oct. 17, 2006 page 1 of 4

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