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HL6557MG PDF预览

HL6557MG

更新时间: 2024-02-04 22:40:21
品牌 Logo 应用领域
OPNEXT 二极管激光二极管
页数 文件大小 规格书
3页 80K
描述
AlGaInP Laser Diodes

HL6557MG 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.61Is Samacsys:N
Base Number Matches:1

HL6557MG 数据手册

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HL6557MG  
AlGaInP Laser Diodes  
ODE-208-053 (Z)  
Preliminary  
Rev.0  
Feb. 22, 2007  
Description  
The HL6557MG is a 0.65 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is  
suitable as light sources in bar code readers, laser levelers and various other types of optical equipment.  
Features  
Package Type  
HL6557: MG  
Internal Circuit  
Visible light output  
Single longitudinal mode  
Optical output power : 10 mW CW  
Low operating voltage : 2.8 V Max  
Built-in photodiode for monitoring laser output  
: λp =658 nm Typ  
1
3
PD  
LD  
Small package  
: φ 5.6 mm  
2
Absolute Maximum Ratings  
(TC = 25°C)  
Item  
Optical output power  
LD reverse voltage  
Symbol  
Ratings  
Unit  
mW  
V
PO  
12  
2
VR(LD)  
PD reverse voltage  
Operating temperature  
Storage temperature  
VR(PD)  
Topr  
Tstg  
30  
V
–10 to +70  
–40 to +85  
°C  
°C  
Optical and Electrical Characteristics  
(TC = 25°C)  
Item  
Threshold current  
Operating current  
Operating voltage  
Symbol  
Ith  
Min  
30  
7
Typ  
45  
Max  
Unit  
mA  
mA  
V
Test Conditions  
70  
90  
IOP  
VOP  
θ//  
60  
PO = 10 mW  
PO = 10 mW  
PO = 10 mW  
2.8  
10.5  
Beam divergence  
8.5  
°
parallel to the junction  
Beam divergence  
θ⊥  
18  
22  
26  
°
PO = 10 mW  
perpendicular to the junction  
Astigmatism  
6
PO = 5 mW, NA = 0.55  
PO = 10 mW  
AS  
λp  
IS  
Lasing wavelength  
Monitor current  
645  
0.03  
658  
0.07  
665  
0.15  
nm  
mA  
PO = 10 mW, VR(PD) = 5 V  
Rev.0 Feb. 22, 2007 page 1 of 3  

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