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HL6553FG PDF预览

HL6553FG

更新时间: 2024-01-26 18:19:31
品牌 Logo 应用领域
OPNEXT 二极管激光二极管
页数 文件大小 规格书
4页 93K
描述
Visible High Power Laser Diode

HL6553FG 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.61Is Samacsys:N
Base Number Matches:1

HL6553FG 数据手册

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HL6553FG  
Visible High Power Laser Diode  
ODE-208-016C (Z)  
Rev.3  
Aug. 29, 2006  
Description  
The HL6553FG is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable  
as a light source for measurement, and various other types of optical equipment.  
Features  
Internal Circuit  
Package Type  
HL6553FG  
Optical output power : 120 mW CW operation  
Single longitudinal mode.  
Visible light output  
(Flange)  
2
1
: λp = 660 nm Typ  
LD  
PD  
3
4
Absolute Maximum Ratings  
(TC = 25°C)  
Item  
Optical output power  
LD reverse voltage  
Symbol  
Ratings  
130  
Unit  
mW  
V
PO  
VR(LD)  
2
PD reverse voltage  
Operating temperature  
Storage temperature  
VR(PD)  
Topr  
Tstg  
30  
V
–10 to +60  
–40 to +85  
°C  
°C  
Optical and Electrical Characteristics  
(TC = 25°C)  
Item  
Threshold current  
Operating current  
Operating voltage  
Lasing wavelength  
Symbol  
Ith  
Min  
Typ  
55  
Max  
Unit  
mA  
mA  
V
Test Conditions  
70  
210  
3.0  
665  
13  
IOP  
VOP  
λp  
175  
2.6  
660  
10  
PO = 120 mW  
PO = 120 mW  
PO = 120 mW  
PO = 120 mW  
654  
7
nm  
°
Beam divergence  
θ//  
parallel to the junction  
Beam divergence  
θ⊥  
15  
17  
20  
°
PO = 120 mW  
perpendicular to the junction  
Monitor current  
Is  
0.4  
0.8  
1.6  
mA  
PO = 120 mW,  
VR(PD) = 5V  
Rev.3 Aug. 29, 2006 page 1 of 4  

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