Datasheet > HL6526FM

HL6526FM

更新时间： 2024-01-24 13:51:56

品牌	Logo	应用领域
OPNEXT		二极管激光二极管
页数	文件大小	规格书
4页	95K
描述
Visible High Power Laser Diode

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技术参数
数据手册

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HL6526FM 技术参数

生命周期：	Obsolete	包装说明：	LD/FM, 3 PIN
Reach Compliance Code：	unknown	风险等级：	5.84
配置：	SINGLE	功能数量：	1
最高工作温度：	75 °C	最低工作温度：	-10 °C
光电设备类型：	LASER DIODE	标称输出功率：	70 mW
峰值波长：	658 nm	形状：	ROUND
尺寸：	1.6 mm	最大阈值电流：	55 mA

HL6526FM 数据手册

HL6526FM

Visible High Power Laser Diode

ODE-208-055 (Z)

Rev.0

Oct. 20, 2006

Description

The HL6526FM is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is

suitable as a light source for large capacity optical disc memories, and various other types of optical equipment.

Features

Package Type

• HL6526FM: FM

Internal Circuit

•

Operating temperature: 75°C Max

(140 mW(pulse), PW = 100ns, duty = 50%)

•

Small package

Visible light output

Low operating current : Iop = 100 mA Typ

(Po = 60 mW)

: φ 5.6 mm

: λp = 658 nm Typ

Absolute Maximum Ratings

(T_C= 25°C)

Item

Optical output power

Symbol

Ratings

Unit

P_O

Pulse optical output power

Laser diode reverse voltage

CW Operating temperature

Pulse Operating temperature

Storage temperature

140 *¹

(pulse)

V_R(LD)

Topr_(CW)

Topr_(pulse)

Tstg

−10 to +75

−40 to +85

°C

Note: 1. Pulse condition : Pulse width = 100 ns, duty = 50%

Optical and Electrical Characteristics

(T_C= 25°C)

Item

Threshold current

Operating current

Operating voltage

Lasing wavelength

Symbol

Ith

Min

—

Typ

Max

Unit

Test Conditions

—

Iop

V_OP

λp

—

100

2.6

120

3.0

P_O= 60 mW

—

652

7.5

658

10.0

662

12.0

Beam divergence

θ//

parallel to the junction

Beam divergence

parpendicular to the junction

θ⊥

—

P_O= 60 mW

Astigmatism

A_S

µm

P_O= 3 mW, NA = 0.55

Rev.0 Oct. 20, 2006 page 1 of 4

12 3 4

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