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HL6525MG PDF预览

HL6525MG

更新时间: 2024-01-08 03:14:08
品牌 Logo 应用领域
OPNEXT 二极管激光二极管
页数 文件大小 规格书
4页 96K
描述
Visible High Power Laser Diode

HL6525MG 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.02Is Samacsys:N
Base Number Matches:1

HL6525MG 数据手册

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HL6525MG  
Visible High Power Laser Diode  
ODE-208-054 (Z)  
Rev.0  
Oct. 20, 2006  
Description  
The HL6525MG is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is  
suitable as a light source for large capacity optical disc memories, and various other types of optical equipment.  
Features  
Package Type  
HL6525MG: MG  
Internal Circuit  
Operating temperature: 75°C Max  
1
3
(140 mW(pulse), PW = 100ns, duty = 50%)  
Small package  
Visible light output  
Low operating current : Iop = 100 mA Typ  
(Po = 60 mW)  
: φ 5.6 mm  
: λp = 658 nm Typ  
LD  
2
Absolute Maximum Ratings  
(TC = 25°C)  
Item  
Optical output power  
Symbol  
Ratings  
70  
Unit  
mW  
mW  
V
PO  
PO  
Pulse optical output power  
Laser diode reverse voltage  
CW Operating temperature  
Pulse Operating temperature  
Storage temperature  
140 *1  
(pulse)  
VR(LD)  
2
Topr(CW)  
Topr(pulse)  
Tstg  
10 to +75  
10 to +75  
40 to +85  
°C  
°C  
°C  
Note: 1. Pulse condition : Pulse width = 100 ns, duty = 50%  
Optical and Electrical Characteristics  
(TC = 25°C)  
Item  
Threshold current  
Operating current  
Operating voltage  
Lasing wavelength  
Symbol  
Ith  
Min  
Typ  
40  
Max  
55  
Unit  
Test Conditions  
mA  
mA  
V
Iop  
VOP  
λp  
100  
2.6  
120  
3.0  
PO = 60 mW  
PO = 60 mW  
PO = 60 mW  
PO = 60 mW  
652  
7.5  
658  
10.0  
662  
12.0  
nm  
°
Beam divergence  
θ//  
parallel to the junction  
Beam divergence  
perpendicular to the junction  
θ⊥  
15  
17  
1
19  
°
PO = 60 mW  
Astigmatism  
AS  
µm  
PO = 3 mW, NA = 0.55  
Rev.0 Oct. 20, 2006 page 1 of 4  

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