热门搜索: 102C10039X ISL3159EIRZ
HL6512MG PDF预览

HL6512MG - OPNEXT. INC.

半导体光电二极管激光二极管
型号:
HL6512MG
Datasheet下载:
HL6512MG
HL6512MG描述:
Visible High Power Laser Diode
HL6512MG应用:
半导体光电二极管激光二极管
文档页数/大小:
4页 / 95K
品牌Logo:
品牌名称:
OPNEXT [ OPNEXT. INC. ]

PDF在线预览

一键下载

我要报错

HL6512MG

应用: 半导体光电二极管激光二极管

文档: 4页 / 95K

品牌: OPNEXT

PDF在线预览
一键下载
我要报错
  • HL6512MG参数
  • PDF预览
生命周期
Transferred
IHS 制造商
RENESAS ELECTRONICS CORP
包装说明
LD/MG, 3 PIN
Reach Compliance Code
compliant
风险等级
5.02
Is Samacsys
N
配置
SINGLE
功能数量
1
最高工作温度
60 °C
最低工作温度
-10 °C
光电设备类型
LASER DIODE
标称输出功率
50 mW
峰值波长
658 nm
形状
ROUND
尺寸
1.6 mm
最大阈值电流
60 mA
Base Number Matches
1
 浏览型号HL6512MG的Datasheet PDF文件第2页浏览型号HL6512MG的Datasheet PDF文件第3页浏览型号HL6512MG的Datasheet PDF文件第4页 
下一页
HL6512MG
Visible High Power Laser Diode
Description
The HL6512MG is a 0.65
µm
band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. Its beam
divergence (parallel to the junction) has a small variation to the optical output power. It is suitable as light sources for
laser scanners and optical equipment for measurement.
ODE-208-042A (Z)
Rev.1
Oct. 20, 2006
Features
High output power and Wide operating temperature:
70 mW (pulse), PW = 100ns, duty = 50%,
(Topr = 70°C)
Small package
:
φ
5.6 mm
Visible light output
:
λp
= 658 nm Typ
The beam divergence (parallel to the junction) has a
small variation to the output power.
Single longitudinal mode
Package Type
HL6512MG: MG
Internal Circuit
1
3
LD
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Optical output power
Pulse optical output power
Laser diode reverse voltage
Operating temperature
Storage temperature
Symbol
P
O
P
O
(pulse)
V
R(LD)
Topr
Tstg
Ratings
50
1
70 *
2
2
−10
to +70 *
−40
to +85
Unit
mW
mW
V
°C
°C
Notes: 1. Pulse condition : Pulse width = 100 ns, duty = 50%
2. The value of
−10
to +70°C is effective under pulse operation. The value under CW operation is
−10
to +60°C.
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Threshold current
Operating current
Operating voltage
Beam divergence
parallel to the junction
Beam divergence
perpendicular to the junction
Astigmatism
Lasing wavelength
Symbol
Ith
Iop
V
OP
θ//
θ⊥
A
S
λp
Min
30
2.1
7
18
655
Typ
45
115
2.6
8.5
21
5
658
Max
60
135
3.0
11
26
662
Unit
mA
mA
V
°
°
µm
nm
Test Conditions
P
O
= 50 mW
P
O
= 50 mW
P
O
= 50 mW
P
O
= 50 mW
P
O
= 5 mW, NA = 0.55
P
O
= 50 mW
Rev.1 Oct. 20, 2006 page 1 of 4

与HL6512MG相似型号

型号 品牌 描述 数据表
HL6513FM OPNEXT Visible High Power Laser Diode
HL6515MG ETC
HL6525MG OPNEXT Visible High Power Laser Diode
HL6526FM OPNEXT Visible High Power Laser Diode