HL6512MG PDF预览

HL6512MG - OPNEXT. INC.

型号:
HL6512MG
描述:
Visible High Power Laser Diode
应用:
半导体光电二极管激光二极管
文档页数/大小:
4页 / 95K
品牌Logo:
品牌名称:
OPNEXT [ OPNEXT. INC. ]
HL6512MG 数据手册
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HL6512MG
Visible High Power Laser Diode
Description
The HL6512MG is a 0.65
µm
band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. Its beam
divergence (parallel to the junction) has a small variation to the optical output power. It is suitable as light sources for
laser scanners and optical equipment for measurement.
ODE-208-042A (Z)
Rev.1
Oct. 20, 2006
Features
High output power and Wide operating temperature:
70 mW (pulse), PW = 100ns, duty = 50%,
(Topr = 70°C)
Small package
:
φ
5.6 mm
Visible light output
:
λp
= 658 nm Typ
The beam divergence (parallel to the junction) has a
small variation to the output power.
Single longitudinal mode
Package Type
HL6512MG: MG
Internal Circuit
1
3
LD
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Optical output power
Pulse optical output power
Laser diode reverse voltage
Operating temperature
Storage temperature
Symbol
P
O
P
O
(pulse)
V
R(LD)
Topr
Tstg
Ratings
50
1
70 *
2
2
−10
to +70 *
−40
to +85
Unit
mW
mW
V
°C
°C
Notes: 1. Pulse condition : Pulse width = 100 ns, duty = 50%
2. The value of
−10
to +70°C is effective under pulse operation. The value under CW operation is
−10
to +60°C.
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Threshold current
Operating current
Operating voltage
Beam divergence
parallel to the junction
Beam divergence
perpendicular to the junction
Astigmatism
Lasing wavelength
Symbol
Ith
Iop
V
OP
θ//
θ⊥
A
S
λp
Min
30
2.1
7
18
655
Typ
45
115
2.6
8.5
21
5
658
Max
60
135
3.0
11
26
662
Unit
mA
mA
V
°
°
µm
nm
Test Conditions
P
O
= 50 mW
P
O
= 50 mW
P
O
= 50 mW
P
O
= 50 mW
P
O
= 5 mW, NA = 0.55
P
O
= 50 mW
Rev.1 Oct. 20, 2006 page 1 of 4

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