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HL6501MG PDF预览

HL6501MG

更新时间: 2024-01-14 07:38:55
品牌 Logo 应用领域
OPNEXT 半导体光电二极管激光二极管
页数 文件大小 规格书
4页 94K
描述
Visible High Power Laser Diode

HL6501MG 技术参数

生命周期:ActiveReach Compliance Code:unknown
Factory Lead Time:12 weeks 6 days风险等级:5.58
配置:SINGLE WITH BUILT-IN PHOTO DIODE功能数量:1
最高工作温度:60 °C最低工作温度:-10 °C
光电设备类型:LASER DIODE标称输出功率:35 mW
峰值波长:658 nm形状:ROUND
尺寸:1.6 mm最大阈值电流:70 mA
Base Number Matches:1

HL6501MG 数据手册

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HL6501MG  
Visible High Power Laser Diode  
ODE-208-040A (Z)  
Rev.1  
Dec. 13, 2006  
Description  
The HL6501MG is a 0.65 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is  
suitable as a light source for large capacity optical disc memories and various other types of optical equipment.  
Hermetic sealing of the small package (φ5.6 mm) assures high reliability.  
Features  
Package Type  
HL6501MG: MG  
Internal Circuit  
High output power: 35 mW (CW)  
Visible light output: λp = 658 nm Typ  
Small package: φ 5.6 mm  
Low astigmatism: 6 µm Typ (PO = 5 mW)  
Single longitudinal mode  
1
3
PD  
LD  
2
Absolute Maximum Ratings  
(TC = 25°C)  
Item  
Optical output power  
Pulse optical output power  
LD reverse voltage  
Symbol  
Ratings  
Unit  
mW  
mW  
V
PO  
35  
50 *  
PO(pulse)  
VR(LD)  
VR(PD)  
Topr  
2
PD reverse voltage  
30  
V
Operating temperature  
Storage temperature  
–10 to +60  
–40 to +85  
°C  
Tstg  
°C  
Note: Pulse condition : Pulse width = 100 ns , duty = 50%  
Optical and Electrical Characteristics  
(TC = 25°C)  
Item  
Threshold current  
Operating voltage  
Slope efficiency  
Symbol  
Ith  
Min  
30  
Typ  
45  
Max  
70  
Unit  
Test Conditions  
mA  
V
VOP  
ηs  
2.1  
0.5  
7
2.6  
3.0  
PO = 30 mW  
0.75  
8.5  
1.0  
mW/mA 18 (mW) / (I(24mW) – I(6mW))  
Beam divergence  
parallel to the junction  
Beam divergence  
perpendicular to the junction  
Astigmatism  
θ//  
10.5  
°
PO = 30 mW  
θ⊥  
18  
22  
26  
°
PO = 30 mW  
AS  
λp  
IS  
6
665  
1.5  
µm  
nm  
mA  
PO = 5 mW, NA = 0.55  
PO = 30 mW  
Lasing wavelength  
Monitor current  
645  
0.05  
658  
0.2  
PO = 30 mW, VR(PD) = 5 V  
Rev.1 Dec. 13, 2006 page 1 of 4  

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