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HL6367DG PDF预览

HL6367DG

更新时间: 2024-02-21 14:41:53
品牌 Logo 应用领域
OPNEXT 光电二极管激光二极管
页数 文件大小 规格书
4页 94K
描述
Low Operating Current Visible High Power Laser Diode

HL6367DG 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownFactory Lead Time:12 weeks 6 days
风险等级:5.54配置:SINGLE WITH BUILT-IN PHOTO DIODE
功能数量:1最高工作温度:50 °C
最低工作温度:-10 °C光电设备类型:LASER DIODE
标称输出功率:90 mW峰值波长:642 nm
形状:ROUND尺寸:1.6 mm
最大阈值电流:95 mABase Number Matches:1

HL6367DG 数据手册

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HL6366DG/67DG  
Low Operating Current Visible High Power Laser Diode  
ODE-208-061B (Z)  
Rev.2  
Dec. 21, 2006  
Description  
The HL6366DG/67DG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are  
suitable as light sources for laser display, laser module and optical equipment for measurement.  
Features  
Package Type  
HL6366DG/67DG: DG  
Internal Circuit  
HL6366DG  
Internal Circuit  
HL6367DG  
Visible light output  
Single longitudinal mode  
: 642 nm Typ  
1
3
1
3
Optical output power : 80 mW CW  
Low operating current : 155 mA Typ  
Low operating voltage : 2.7 V Max  
Operating temperature : +50°C  
TE mode oscillation  
PD  
LD  
PD  
LD  
2
2
Absolute Maximum Ratings  
(TC = 25°C)  
Item  
Optical output power  
LD reverse voltage  
Symbol  
Ratings  
Unit  
mW  
V
PO  
90  
2
VR(LD)  
PD reverse voltage  
Operating temperature  
Storage temperature  
VR(PD)  
Topr  
Tstg  
30  
V
–10 to +50  
–40 to +85  
°C  
°C  
Optical and Electrical Characteristics  
(TC = 25°C)  
Item  
Threshold current  
Operating current  
Operating voltage  
Symbol  
Ith  
Min  
7
Typ  
80  
Max  
Unit  
mA  
mA  
V
Test Condition  
95  
175  
2.7  
13  
IOP  
VOP  
θ//  
155  
2.5  
10  
PO = 80 mW  
PO = 80 mW  
PO = 80 mW  
Beam divergence  
°
parallel to the junction  
Beam divergence  
θ⊥  
16  
21  
24  
°
PO = 80 mW  
perpendicular to the junction  
Lasing wavelength  
Monitor current  
λp  
635  
0.1  
642  
0.3  
645  
0.5  
nm  
mA  
PO = 80 mW  
IS  
PO = 80 mW, VR(PD) = 5 V  
Rev.2 Dec. 21, 2006 page 1 of 4  

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