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HL6365DG PDF预览

HL6365DG

更新时间: 2024-01-15 00:08:01
品牌 Logo 应用领域
OPNEXT 半导体光电二极管激光二极管
页数 文件大小 规格书
4页 94K
描述
Low Operating Current Visible Laser Diode

HL6365DG 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.6配置:SINGLE WITH BUILT-IN PHOTO DIODE
功能数量:1最高工作温度:50 °C
最低工作温度:-10 °C光电设备类型:LASER DIODE
标称输出功率:65 mW峰值波长:642 nm
形状:ROUND尺寸:1.6 mm
最大阈值电流:80 mABase Number Matches:1

HL6365DG 数据手册

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HL6364DG/65DG  
Low Operating Current Visible Laser Diode  
ODE-208-060B (Z)  
Rev.2  
Oct. 17, 2006  
Description  
The HL6364DG/65DG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are  
suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.  
Features  
Package Type  
HL6364DG/65DG: DG  
Internal Circuit  
HL6364DG  
Internal Circuit  
HL6365DG  
Visible light output  
Single longitudinal mode  
: 642 nm Typ  
1
3
1
3
Optical output power : 60 mW CW  
Low operating current : 125 mA Typ  
Low operating voltage : 2.7 V Max  
Operating temperature : +50°C  
TE mode oscillation  
PD  
LD  
PD  
LD  
2
2
Absolute Maximum Ratings  
(TC = 25°C)  
Item  
Optical output power  
LD reverse voltage  
Symbol  
Ratings  
Unit  
mW  
V
PO  
65  
2
VR(LD)  
PD reverse voltage  
Operating temperature  
Storage temperature  
VR(PD)  
Topr  
Tstg  
30  
V
–10 to +50  
–40 to +85  
°C  
°C  
Optical and Electrical Characteristics  
(TC = 25°C)  
Item  
Threshold current  
Operating current  
Operating voltage  
Symbol  
Ith  
Min  
7
Typ  
65  
Max  
Unit  
mA  
mA  
V
Test Condition  
80  
155  
2.7  
13  
IOP  
VOP  
θ//  
125  
2.5  
10  
PO = 60 mW  
PO = 60 mW  
PO = 60 mW  
Beam divergence  
°
parallel to the junction  
Beam divergence  
θ⊥  
16  
21  
24  
°
PO = 60 mW  
perpendicular to the junction  
Lasing wavelength  
Monitor current  
λp  
635  
0.2  
642  
0.4  
645  
0.8  
nm  
mA  
PO = 60 mW  
IS  
PO = 60 mW, VR(PD) = 5 V  
Rev.2 Oct. 17, 2006 page 1 of 4  

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