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HL6364DG PDF预览

HL6364DG - OPNEXT. INC.

光电二极管激光二极管
型号:
HL6364DG
Datasheet下载:
HL6364DG
HL6364DG描述:
Low Operating Current Visible Laser Diode
HL6364DG应用:
光电二极管激光二极管
文档页数/大小:
4页 / 94K
品牌Logo:
品牌名称:
OPNEXT [ OPNEXT. INC. ]

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HL6364DG

应用: 光电二极管激光二极管

文档: 4页 / 94K

品牌: OPNEXT

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  • HL6364DG参数
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生命周期
Active
IHS 制造商
USHIO OPTO SEMICONDUCTORS INC
包装说明
LD/DG, 3 PIN
Reach Compliance Code
unknown
风险等级
5.02
Is Samacsys
N
配置
SINGLE WITH BUILT-IN PHOTO DIODE
功能数量
1
最高工作温度
50 °C
最低工作温度
-10 °C
光电设备类型
LASER DIODE
标称输出功率
65 mW
峰值波长
642 nm
形状
ROUND
尺寸
1.6 mm
最大阈值电流
80 mA
Base Number Matches
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HL6364DG/65DG
Low Operating Current Visible Laser Diode
Description
The HL6364DG/65DG are 0.63
µm
band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are
suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
ODE-208-060B (Z)
Rev.2
Oct. 17, 2006
Features
Visible light output
: 642 nm Typ
Single longitudinal mode
Optical output power : 60 mW CW
Low operating current : 125 mA Typ
Low operating voltage : 2.7 V Max
Operating temperature : +50°C
TE mode oscillation
Package Type
HL6364DG/65DG: DG
Internal Circuit
HL6364DG
1
3
Internal Circuit
HL6365DG
1
3
PD
LD
PD
LD
2
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Symbol
P
O
V
R(LD)
V
R(PD)
Topr
Tstg
Ratings
65
2
30
–10 to +50
–40 to +85
Unit
mW
V
V
°C
°C
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Threshold current
Operating current
Operating voltage
Beam divergence
parallel to the junction
Beam divergence
perpendicular to the junction
Lasing wavelength
Monitor current
Symbol
Ith
I
OP
V
OP
θ//
θ⊥
λp
I
S
Min
7
16
635
0.2
Typ
65
125
2.5
10
21
642
0.4
Max
80
155
2.7
13
24
645
0.8
Unit
mA
mA
V
°
°
nm
mA
Test Condition
P
O
= 60 mW
P
O
= 60 mW
P
O
= 60 mW
P
O
= 60 mW
P
O
= 60 mW
P
O
= 60 mW, V
R(PD)
= 5 V
Rev.2 Oct. 17, 2006 page 1 of 4

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