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HL6363MG PDF预览

HL6363MG - OPNEXT. INC.

半导体光电二极管激光二极管
型号:
HL6363MG
Datasheet下载:
HL6363MG
HL6363MG描述:
Low Operating Current Visible Laser Diode
HL6363MG应用:
半导体光电二极管激光二极管
文档页数/大小:
5页 / 102K
品牌Logo:
品牌名称:
OPNEXT [ OPNEXT. INC. ]

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HL6363MG

应用: 半导体光电二极管激光二极管

文档: 5页 / 102K

品牌: OPNEXT

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  • HL6363MG参数
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生命周期
Active
Reach Compliance Code
unknown
风险等级
5.58
配置
SINGLE WITH BUILT-IN PHOTO DIODE
功能数量
1
最高工作温度
50 °C
最低工作温度
-10 °C
光电设备类型
LASER DIODE
标称输出功率
45 mW
峰值波长
640 nm
形状
ROUND
尺寸
1.6 mm
最大阈值电流
60 mA
Base Number Matches
1
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HL6362MG/63MG
Low Operating Current Visible Laser Diode
Description
The HL6362MG/63MG are 0.63
µm
band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are
suitable as light sources for laser display, laser scanners and optical equipment for measurement.
ODE-208-011E (Z)
Rev.5
Apr. 14, 2006
Features
Visible light output
: 640 nm Typ
Single longitudinal mode
Optical output power : 40 mW CW
Low operating current : 90 mA Typ
Low operating voltage : 2.6 V Max
Operating temperature : +50°C
TE mode oscillation
Package Type
HL6362MG/63MG: MG
Internal Circuit
HL6362MG
1
3
Internal Circuit
HL6363MG
1
3
PD
LD
PD
LD
2
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Symbol
P
O
V
R(LD)
V
R(PD)
Topr
Tstg
Ratings
45
2
30
–10 to +50
–40 to +85
Unit
mW
V
V
°C
°C
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Threshold current
Operating current
Operating voltage
Beam divergence
parallel to the junction
Beam divergence
perpendicular to the junction
Lasing wavelength
Monitor current
Symbol
Ith
I
OP
V
OP
θ//
θ⊥
λp
I
S
Min
7
16
0.15
Typ
45
90
2.4
10
21
640
0.30
Max
60
110
2.6
13
24
643
0.60
Unit
mA
mA
V
°
°
nm
mA
Test Condition
P
O
= 40 mW
P
O
= 40 mW
P
O
= 40 mW
P
O
= 40 mW
P
O
= 40 mW
P
O
= 40 mW ,V
R(PD)
= 5 V
Rev.5 Apr. 14, 2006 page 1 of 5

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