Datasheet > HL6363MG

HL6363MG

更新时间： 2024-02-21 12:57:43

品牌	Logo	应用领域
OPNEXT		半导体光电二极管激光二极管
页数	文件大小	规格书
5页	102K
描述
Low Operating Current Visible Laser Diode

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技术参数
数据手册

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HL6363MG 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.58	配置：	SINGLE WITH BUILT-IN PHOTO DIODE
功能数量：	1	最高工作温度：	50 °C
最低工作温度：	-10 °C	光电设备类型：	LASER DIODE
标称输出功率：	45 mW	峰值波长：	640 nm
形状：	ROUND	尺寸：	1.6 mm
最大阈值电流：	60 mA	Base Number Matches：	1

HL6363MG 数据手册

HL6362MG/63MG

Low Operating Current Visible Laser Diode

ODE-208-011E (Z)

Rev.5

Apr. 14, 2006

Description

The HL6362MG/63MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are

suitable as light sources for laser display, laser scanners and optical equipment for measurement.

Features

Package Type

• HL6362MG/63MG: MG

Internal Circuit

• HL6362MG

Internal Circuit

• HL6363MG

•

Visible light output

Single longitudinal mode

: 640 nm Typ

Optical output power : 40 mW CW

Low operating current : 90 mA Typ

Low operating voltage : 2.6 V Max

Operating temperature : +50°C

TE mode oscillation

Absolute Maximum Ratings

(T_C= 25°C)

Item

Optical output power

LD reverse voltage

Symbol

Ratings

Unit

P_O

V_R(LD)

PD reverse voltage

Operating temperature

Storage temperature

V_R(PD)

Topr

Tstg

–10 to +50

–40 to +85

°C

Optical and Electrical Characteristics

(T_C= 25°C)

Item

Threshold current

Operating current

Operating voltage

Symbol

Ith

Min

—

Typ

Max

Unit

Test Condition

110

2.6

—

I_OP

V_OP

θ//

P_O= 40 mW

2.4

Beam divergence

parallel to the junction

Beam divergence

θ⊥

P_O= 40 mW

perpendicular to the junction

Lasing wavelength

Monitor current

λp

—

640

643

P_O= 40 mW

I_S

0.15

0.30

0.60

P_O= 40 mW ,V_R(PD)= 5 V

Rev.5 Apr. 14, 2006 page 1 of 5

12 3 4 5

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