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HL6354MG

更新时间: 2024-01-20 09:33:11
品牌 Logo 应用领域
OPNEXT 半导体光电二极管激光二极管
页数 文件大小 规格书
4页 94K
描述
Low Operating Current Visible Laser Diode

HL6354MG 技术参数

生命周期:ActiveReach Compliance Code:unknown
Factory Lead Time:12 weeks 6 days风险等级:5.58
配置:SINGLE WITH BUILT-IN PHOTO DIODE功能数量:1
最高工作温度:50 °C最低工作温度:-10 °C
光电设备类型:LASER DIODE标称输出功率:7 mW
峰值波长:638 nm形状:ROUND
尺寸:1.6 mm最大阈值电流:27 mA
Base Number Matches:1

HL6354MG 数据手册

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HL6354MG/55MG  
Low Operating Current Visible Laser Diode  
ODE-208-007G (Z)  
Rev.7  
May 30, 2006  
Description  
The HL6354MG/55MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are  
suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.  
Features  
Package Type  
HL6354MG/55MG: MG  
Internal Circuit  
HL6354MG  
Internal Circuit  
HL6355MG  
Visible light output  
Single longitudinal mode  
: 635 nm Typ  
1
3
1
3
Optical output power : 5 mW CW  
Low operating current : 27 mA Typ  
Low operating voltage : 2.4 V Max  
Operating temperature : +50°C  
TM mode oscillation  
LD  
PD  
PD  
LD  
2
2
Absolute Maximum Ratings  
(TC = 25°C)  
Item  
Optical output power  
LD reverse voltage  
Symbol  
Ratings  
Unit  
mW  
V
PO  
7
2
VR(LD)  
PD reverse voltage  
Operating temperature  
Storage temperature  
VR(PD)  
Topr  
Tstg  
30  
V
–10 to +50  
–40 to +85  
°C  
°C  
Optical and Electrical Characteristics  
(TC = 25°C)  
Item  
Threshold current  
Operating current  
Operating voltage  
Symbol  
Ith  
Min  
6
Typ  
20  
27  
2.2  
8
Max  
Unit  
mA  
mA  
V
Test Conditions  
27  
36  
2.4  
10  
IOP  
VOP  
θ//  
PO = 5 mW  
PO = 5 mW  
PO = 5 mW  
Beam divergence  
°
parallel to the junction  
Beam divergence  
θ⊥  
20  
25  
30  
°
PO = 5 mW  
perpendicular to the junction  
Lasing wavelength  
Monitor current  
λp  
630  
635  
640  
nm  
mA  
PO = 5 mW  
IS  
0.15  
0.40  
0.60  
PO = 5 mW, VR(PD) = 5 V  
Rev.7 May 30, 2006 page 1 of 4  

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