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HL6348MG PDF预览

HL6348MG

更新时间: 2024-01-28 07:42:16
品牌 Logo 应用领域
OPNEXT 半导体光电
页数 文件大小 规格书
5页 109K
描述
Circular Beam Low Operating Current

HL6348MG 技术参数

生命周期:Transferred包装说明:LD/MG, 3 PIN
Reach Compliance Code:compliant风险等级:5.02
Is Samacsys:N配置:SINGLE WITH BUILT-IN PHOTO DIODE
功能数量:1最高工作温度:50 °C
最低工作温度:-10 °C光电设备类型:LASER DIODE
标称输出功率:10 mW峰值波长:635 nm
形状:ROUND尺寸:1.6 mm
最大阈值电流:30 mABase Number Matches:1

HL6348MG 数据手册

 浏览型号HL6348MG的Datasheet PDF文件第2页浏览型号HL6348MG的Datasheet PDF文件第3页浏览型号HL6348MG的Datasheet PDF文件第4页浏览型号HL6348MG的Datasheet PDF文件第5页 
HL6347MG/48MG  
Circular Beam Low Operating Current  
ODE-208-019 (Z)  
Rev.0  
Jul. 01, 2005  
Description  
The HL6347MG/48MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These  
products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source  
for laser levelers, laser scanners and optical equipment for measurement.  
Features  
Internal Circuit  
HL6347MG  
Internal Circuit  
HL6348MG  
Package Type  
HL6347MG/48MG: MG  
Optical output power : 10 mW CW  
Single longitudinal mode  
1
3
1
3
Visible light power  
Low operating current : 35 mA Typ  
Low aspect ratio : 1.2 Typ  
: 635 nm Typ  
PD  
LD  
PD  
LD  
Operating temperature : +50°C  
TM mode oscillation  
2
2
Absolute Maximum Ratings  
(TC = 25°C)  
Item  
Optical output power  
Pulse optical output power  
LD reverse voltage  
Symbol  
Ratings  
Unit  
mW  
mW  
V
PO  
10  
12 *  
PO(pulse)  
VR(LD)  
VR(PD)  
Topr  
2
PD reverse voltage  
30  
V
Operating temperature  
Storage temperature  
–10 to +50  
–40 to +85  
°C  
Tstg  
°C  
Note: Pulse condition : Pulse width 1 µs, duty = 50%  
Optical and Electrical Characteristics  
(TC = 25°C)  
Test Conditions  
Item  
Threshold current  
Slope efficiency  
Operating current  
Operating voltage  
Symbol  
Ith  
Min  
Typ  
20  
Max  
35  
Unit  
mA  
ηs  
0.5  
0.8  
35  
1.2  
45  
mW/mA  
6 (mW) / (I(8mW) – I(2mW)  
PO = 10 mW  
)
IOP  
VOP  
λp  
mA  
V
2.4  
635  
17  
2.7  
640  
25  
PO = 10 mW  
Lasing wavelength  
Beam divergence  
630  
13  
nm  
°
PO = 10 mW  
θ//  
PO = 10 mW  
parallel to the junction  
Beam divergence  
θ⊥  
13  
20  
25  
°
PO = 10 mW  
perpendicular to the junction  
Aspect ratio  
θ⊥/θ//  
1.2  
1.5  
µm  
PO = 5 mW, NA = 0.55  
Monitor current  
IS  
0.03  
0.06  
0.12  
mA  
PO = 10 mW, VR(PD) = 5 V  
Notes: 1. The beam has 12 deg offset against the package reference plane. Please take account it mounted on  
aboard.  
2. The beam divergence has dependence of temperature, if you use this device into your system please check  
on it enough before design.  
Rev.0 Jul. 01, 2005 page 1 of 5  

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