HL6340MG/41MG
Circular Beam Low Operating Current
ODE-208-035 (Z)
Rev.0
Jul. 01, 2005
Description
The HL6340MG/41MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These
products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source
for laser levelers, laser scanners and optical equipment for measurement.
Features
Package Type
• HL6340MG/41MG: MG
Internal Circuit
• HL6340MG
Internal Circuit
• HL6341MG
•
•
•
•
•
•
•
Optical output power : 5 mW CW
Single longitudinal mode
1
3
1
3
Visible light power
Low operating current : 25 mA Typ
Low aspect ratio : 1.2 Typ
: 635 nm Typ
PD
LD
PD
LD
Operating temperature : +50°C
TM mode oscillation
2
2
Absolute Maximum Ratings
(TC = 25°C)
Item
Optical output power
Pulse optical output power
LD reverse voltage
Symbol
Ratings
Unit
mW
mW
V
PO
5
PO(pulse)
VR(LD)
VR(PD)
Topr
6 *
2
PD reverse voltage
30
V
Operating temperature
Storage temperature
–10 to +50
–40 to +85
°C
Tstg
°C
Note: Pulse condition : Pulse width ≤ 1 µs , duty ≤ 50%
Optical and Electrical Characteristics
(TC = 25°C)
Item
Symbol
Ith
Min
—
Typ
20
Max
30
Unit
Test Conditions
Threshold current
mA
—
Slope efficiency
ηs
0.5
—
0.8
25
1.1
40
mW/mA 3 (mW) / (I(4mW) – I(1mW))
Operating current
Operating voltage
Lasing wavelength
Beam divergence
parallel to the junction
Beam divergence
perpendicular to the junction
Aspect ratio
IOP
VOP
λp
mA
V
PO = 5 mW
PO = 5 mW
PO = 5 mW
PO = 5 mW
—
2.4
635
17
2.7
640
25
630
13
nm
°
θ//
θ⊥
16
20
25
°
PO = 5 mW
θ⊥/θ//
—
1.2
1.5
—
PO = 5 mW
Monitor current
IS
0.01
0.03
0.06
mA
PO = 5 mW, VR(PD) = 5 V
Notes: 1. Care must be taken in laser diodes handling to prevent optical damage caused by forward surges as well as
by ESD.
2. The beam has 12 deg offset against the package reference plane. Please take account it mounted on a
board.
Rev.0 Jul. 01, 2005 page 1 of 5