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HL6336G PDF预览

HL6336G

更新时间: 2024-01-30 13:33:42
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OPNEXT /
页数 文件大小 规格书
5页 107K
描述
Circular Beam Low Operating Current

HL6336G 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.02最大正向电流:0.06 A
最大正向电压:2.7 V安装特点:THROUGH HOLE MOUNT
最高工作温度:50 °C最低工作温度:-10 °C
光电设备类型:LASER DIODE峰值波长:635 nm
半导体材料:AlGaInP子类别:Laser Diodes
表面贴装:NOBase Number Matches:1

HL6336G 数据手册

 浏览型号HL6336G的Datasheet PDF文件第2页浏览型号HL6336G的Datasheet PDF文件第3页浏览型号HL6336G的Datasheet PDF文件第4页浏览型号HL6336G的Datasheet PDF文件第5页 
HL6335G/36G  
Circular Beam Low Operating Current  
ODE-208-034 (Z)  
Rev.0  
Jul. 01, 2005  
Description  
The HL6335/36G are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products  
were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source for laser  
levelers, laser scanners and optical equipment for measurement.  
Features  
Package Type  
HL6335/36G: G2  
Internal Circuit  
HL6335G  
Internal Circuit  
HL6336G  
Optical output power : 5 mW CW  
Single longitudinal mode  
1
3
1
3
Visible light power  
Low operating current : 25 mA Typ  
Low aspect ratio : 1.2 Typ  
: 635 nm Typ  
PD  
LD  
PD  
LD  
Operating temperature : +50°C  
TM mode oscillation  
2
2
Absolute Maximum Ratings  
(TC = 25°C)  
Item  
Optical output power  
Pulse optical output power  
LD reverse voltage  
Symbol  
Ratings  
Unit  
mW  
mW  
V
PO  
5
6 *  
2
PO(pulse)  
VR(LD)  
VR(PD)  
Topr  
PD reverse voltage  
30  
V
Operating temperature  
Storage temperature  
–10 to +50  
–40 to +85  
°C  
Tstg  
°C  
Note: Pulse condition : Pulse width 1 µs , duty 50%  
Optical and Electrical Characteristics  
(TC = 25°C)  
Item  
Threshold current  
Slope efficiency  
Operating current  
Operating voltage  
Symbol  
Ith  
Min  
Typ  
20  
Max  
30  
Unit  
Test Conditions  
mA  
ηs  
0.5  
0.8  
25  
1.1  
40  
mW/mA 3 (mW) / (I(4mW) – I(1mW))  
IOP  
VOP  
λp  
mA  
V
PO = 5 mW  
PO = 5 mW  
PO = 5 mW  
PO = 5 mW  
2.4  
635  
17  
2.7  
640  
25  
Lasing wavelength  
630  
13  
nm  
°
Beam divergence  
θ//  
parallel to the junction  
Beam divergence  
perpendicular to the junction  
θ⊥  
16  
20  
25  
°
PO = 5 mW  
PO = 5 mW  
Aspect ratio  
θ⊥/θ//  
1.2  
1.5  
Monitor current  
IS  
0.03  
0.07  
0.12  
mA  
PO = 5 mW, VR(PD) = 5 V  
Notes: 1. Care must be taken in laser diodes handling to prevent optical damage caused by forward surges as well as  
by ESD.  
2. The beam has 12 deg offset against the package reference plane. Please take account it mounted on a  
board.  
Rev.0 Jul. 01, 2005 page 1 of 5  

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