Datasheet > HL6335G

HL6335G

更新时间： 2024-01-22 18:01:42

品牌	Logo	应用领域
OPNEXT		半导体光电
页数	文件大小	规格书
5页	107K
描述
Circular Beam Low Operating Current

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HL6335G 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	LD/G2, 3 PIN	Reach Compliance Code：	unknown
风险等级：	5.02	配置：	SINGLE WITH BUILT-IN PHOTO DIODE
最大正向电流：	0.06 A	最大正向电压：	2.7 V
JESD-609代码：	e0	安装特点：	THROUGH HOLE MOUNT
功能数量：	1	最高工作温度：	50 °C
最低工作温度：	-10 °C	光电设备类型：	LASER DIODE
标称输出功率：	5 mW	峰值波长：	635 nm
半导体材料：	AlGaInP	形状：	ROUND
尺寸：	2 mm	子类别：	Laser Diodes
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
最大阈值电流：	30 mA	Base Number Matches：	1

HL6335G 数据手册

HL6335G/36G

Circular Beam Low Operating Current

ODE-208-034 (Z)

Rev.0

Jul. 01, 2005

Description

The HL6335/36G are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products

were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source for laser

levelers, laser scanners and optical equipment for measurement.

Features

Package Type

• HL6335/36G: G2

Internal Circuit

• HL6335G

Internal Circuit

• HL6336G

•

Optical output power : 5 mW CW

Single longitudinal mode

Visible light power

Low operating current : 25 mA Typ

Low aspect ratio : 1.2 Typ

: 635 nm Typ

Operating temperature : +50°C

TM mode oscillation

Absolute Maximum Ratings

(T_C= 25°C)

Item

Optical output power

Pulse optical output power

LD reverse voltage

Symbol

Ratings

Unit

P_O

6 *

P_O(pulse)

V_R(LD)

V_R(PD)

Topr

PD reverse voltage

Operating temperature

Storage temperature

–10 to +50

–40 to +85

°C

Tstg

°C

Note: Pulse condition : Pulse width ≤ 1 µs , duty ≤ 50%

Optical and Electrical Characteristics

(T_C= 25°C)

Item

Threshold current

Slope efficiency

Operating current

Operating voltage

Symbol

Ith

Min

—

Typ

Max

Unit

Test Conditions

—

ηs

0.5

—

0.8

1.1

mW/mA 3 (mW) / (I_(4mW)– I_(1mW))

I_OP

V_OP

λp

P_O= 5 mW

—

2.4

635

2.7

640

Lasing wavelength

630

Beam divergence

θ//

parallel to the junction

Beam divergence

perpendicular to the junction

θ⊥

P_O= 5 mW

Aspect ratio

θ⊥/θ//

—

1.2

1.5

—

Monitor current

I_S

0.03

0.07

0.12

P_O= 5 mW, V_R(PD)= 5 V

Notes: 1. Care must be taken in laser diodes handling to prevent optical damage caused by forward surges as well as

by ESD.

2. The beam has 12 deg offset against the package reference plane. Please take account it mounted on a

board.

Rev.0 Jul. 01, 2005 page 1 of 5

12 3 4 5

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