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HL6335G PDF预览

HL6335G - OPNEXT. INC.

半导体光电
型号:
HL6335G
Datasheet下载:
HL6335G
HL6335G描述:
Circular Beam Low Operating Current
HL6335G应用:
半导体光电
文档页数/大小:
5页 / 107K
品牌Logo:
品牌名称:
OPNEXT [ OPNEXT. INC. ]

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HL6335G

应用: 半导体光电

文档: 5页 / 107K

品牌: OPNEXT

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  • HL6335G参数
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是否Rohs认证
不符合
生命周期
Transferred
包装说明
LD/G2, 3 PIN
Reach Compliance Code
unknown
风险等级
5.02
配置
SINGLE WITH BUILT-IN PHOTO DIODE
最大正向电流
0.06 A
最大正向电压
2.7 V
JESD-609代码
e0
安装特点
THROUGH HOLE MOUNT
功能数量
1
最高工作温度
50 °C
最低工作温度
-10 °C
光电设备类型
LASER DIODE
标称输出功率
5 mW
峰值波长
635 nm
半导体材料
AlGaInP
形状
ROUND
尺寸
2 mm
子类别
Laser Diodes
表面贴装
NO
端子面层
Tin/Lead (Sn/Pb)
最大阈值电流
30 mA
Base Number Matches
1
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HL6335G/36G
Circular Beam Low Operating Current
Description
The HL6335/36G are 0.63
µm
band AlGaInP laser diodes can be operated with low operating current. These products
were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source for laser
levelers, laser scanners and optical equipment for measurement.
ODE-208-034 (Z)
Rev.0
Jul. 01, 2005
Features
Optical output power : 5 mW CW
Single longitudinal mode
Visible light power
: 635 nm Typ
Low operating current : 25 mA Typ
Low aspect ratio
: 1.2 Typ
Operating temperature : +50°C
TM mode oscillation
Package Type
HL6335/36G: G2
Internal Circuit
HL6335G
1
3
Internal Circuit
HL6336G
1
3
PD
LD
PD
LD
2
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Symbol
Optical output power
P
O
Pulse optical output power
P
O(pulse)
LD reverse voltage
V
R(LD)
PD reverse voltage
V
R(PD)
Operating temperature
Topr
Storage temperature
Tstg
Note: Pulse condition : Pulse width
1
µs
, duty
50%
Ratings
5
6*
2
30
–10 to +50
–40 to +85
Unit
mW
mW
V
V
°C
°C
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Threshold current
Ith
20
30
mA
Slope efficiency
ηs
0.5
0.8
1.1
mW/mA 3 (mW) / (I
(4mW)
– I
(1mW)
)
Operating current
I
OP
25
40
mA
P
O
= 5 mW
Operating voltage
V
OP
2.4
2.7
V
P
O
= 5 mW
Lasing wavelength
λp
630
635
640
nm
P
O
= 5 mW
Beam divergence
θ//
13
17
25
°
P
O
= 5 mW
parallel to the junction
Beam divergence
θ⊥
16
20
25
°
P
O
= 5 mW
perpendicular to the junction
Aspect ratio
θ⊥/θ//
1.2
1.5
P
O
= 5 mW
Monitor current
I
S
0.03
0.07
0.12
mA
P
O
= 5 mW, V
R(PD)
= 5 V
Notes: 1. Care must be taken in laser diodes handling to prevent optical damage caused by forward surges as well as
by ESD.
2. The beam has 12 deg offset against the package reference plane. Please take account it mounted on a
board.
Rev.0 Jul. 01, 2005 page 1 of 5

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