Datasheet > HL6334MG

HL6334MG

更新时间： 2024-01-26 16:30:12

品牌	Logo	应用领域
OPNEXT		半导体光电二极管激光二极管
页数	文件大小	规格书
4页	95K
描述
Low Operating Current Visible Laser Diode

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技术参数
数据手册

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HL6334MG 技术参数

生命周期：	Transferred	包装说明：	LD/MG, 3 PIN
Reach Compliance Code：	compliant	风险等级：	5.02
Is Samacsys：	N	光电设备类型：	LASER DIODE
Base Number Matches：	1

HL6334MG 数据手册

HL6333MG/34MG

Low Operating Current Visible Laser Diode

ODE-208-033A (Z)

Rev.1

Oct. 21, 2005

Description

The HL6333MG/34MG are 0.63 µm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW) structure.

They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.

Features

Package Type

• HL6333MG/34MG: MG

Internal Circuit

• HL6333MG

Internal Circuit

• HL6334MG

•

Visible light output: λp = 635 nm Typ

Single longitudinal mode

Optical output power: 10 mW CW

Low operating current : 55 mA Typ

Low Operating voltage: 2.4 V Max

Operating temperature : +50°C

TM mode oscillation

Absolute Maximum Ratings

(T_C= 25°C)

Item

Optical output power

LD reverse voltage

Symbol

Ratings

Unit

P_O

V_R(LD)

PD reverse voltage

Operating temperature

Storage temperature

V_R(PD)

Topr

Tstg

–10 to +50

–40 to +85

°C

Optical and Electrical Characteristics

(T_C= 25°C)

Item

Threshold current

Operating current

Operating voltage

Slope efficiency

Symbol

Ith

I_O

Min

—

Typ

Max

Unit

Test Conditions

—

P_O= 10 mW

V_OP

ηs

—

2.2

0.65

2.4

0.90

0.40

mW/mA 6 (mW) / (I_(8mW)– I_(2mW))

Beam divergence

parallel to the junction

θ//

P_O= 10 mW

Beam divergence

perpendicular to the junction

θ⊥

Lasing wavelength

Monitor current

λp

630

635

640

I_S

0.04

0.08

0.16

P_O= 10 mW, V_R(PD)= 5 V

Rev.1 Oct. 21, 2005 page 1 of 4

12 3 4

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