HL6331G/32G
Low Operating Current Visible Laser Diode
ODE-208-032A (Z)
Rev.1
Oct. 21, 2005
Description
The HL6331G/32G are 0.63 µm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW) structure. They
are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
Features
Package Type
• HL6331G/32G: G2
Internal Circuit
• HL6331G
Internal Circuit
• HL6332G
•
•
•
•
•
•
•
Visible light output: λp = 635 nm Typ
Single longitudinal mode
1
3
1
3
LD
PD
PD
LD
Optical output power: 10 mW CW
Low operating current : 55 mA Typ
Low Operating voltage: 2.4 V Max
Operating temperature : +60°C
TM mode oscillation
2
2
Absolute Maximum Ratings
(TC = 25°C)
Item
Optical output power
LD reverse voltage
Symbol
Ratings
Unit
mW
V
PO
10
2
VR(LD)
PD reverse voltage
Operating temperature
Storage temperature
VR(PD)
Topr
Tstg
30
V
–10 to +60
–40 to +85
°C
°C
Optical and Electrical Characteristics
(TC = 25°C)
Item
Threshold current
Operating current
Operating voltage
Slope efficiency
Symbol
Ith
Min
—
Typ
40
Max
Unit
mA
mA
V
Test Conditions
60
75
—
IOP
VOP
ηs
—
55
PO = 10 mW
PO = 10 mW
—
2.2
0.65
8
2.4
0.90
11
0.40
6
mW/mA 6 (mW) / (I(8mW) – I(2mW))
Beam divergence
parallel to the junction
θ//
°
PO = 10 mW
PO = 10 mW
PO = 10 mW
Beam divergence
perpendicular to the junction
θ⊥
25
31
36
°
Lasing wavelength
Monitor current
λp
630
635
640
nm
mA
IS
0.08
0.15
0.30
PO = 10 mW, VR(PD) = 5 V
Rev.1 Oct. 21, 2005 page 1 of 4