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HL6332G PDF预览

HL6332G

更新时间: 2024-01-10 09:20:45
品牌 Logo 应用领域
OPNEXT 半导体光电二极管激光二极管
页数 文件大小 规格书
4页 96K
描述
Low Operating Current Visible Laser Diode

HL6332G 技术参数

生命周期:Transferred包装说明:LD/G2, 3 PIN
Reach Compliance Code:unknown风险等级:5.02
Is Samacsys:N光电设备类型:LASER DIODE
Base Number Matches:1

HL6332G 数据手册

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HL6331G/32G  
Low Operating Current Visible Laser Diode  
ODE-208-032A (Z)  
Rev.1  
Oct. 21, 2005  
Description  
The HL6331G/32G are 0.63 µm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW) structure. They  
are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.  
Features  
Package Type  
HL6331G/32G: G2  
Internal Circuit  
HL6331G  
Internal Circuit  
HL6332G  
Visible light output: λp = 635 nm Typ  
Single longitudinal mode  
1
3
1
3
LD  
PD  
PD  
LD  
Optical output power: 10 mW CW  
Low operating current : 55 mA Typ  
Low Operating voltage: 2.4 V Max  
Operating temperature : +60°C  
TM mode oscillation  
2
2
Absolute Maximum Ratings  
(TC = 25°C)  
Item  
Optical output power  
LD reverse voltage  
Symbol  
Ratings  
Unit  
mW  
V
PO  
10  
2
VR(LD)  
PD reverse voltage  
Operating temperature  
Storage temperature  
VR(PD)  
Topr  
Tstg  
30  
V
–10 to +60  
–40 to +85  
°C  
°C  
Optical and Electrical Characteristics  
(TC = 25°C)  
Item  
Threshold current  
Operating current  
Operating voltage  
Slope efficiency  
Symbol  
Ith  
Min  
Typ  
40  
Max  
Unit  
mA  
mA  
V
Test Conditions  
60  
75  
IOP  
VOP  
ηs  
55  
PO = 10 mW  
PO = 10 mW  
2.2  
0.65  
8
2.4  
0.90  
11  
0.40  
6
mW/mA 6 (mW) / (I(8mW) – I(2mW))  
Beam divergence  
parallel to the junction  
θ//  
°
PO = 10 mW  
PO = 10 mW  
PO = 10 mW  
Beam divergence  
perpendicular to the junction  
θ⊥  
25  
31  
36  
°
Lasing wavelength  
Monitor current  
λp  
630  
635  
640  
nm  
mA  
IS  
0.08  
0.15  
0.30  
PO = 10 mW, VR(PD) = 5 V  
Rev.1 Oct. 21, 2005 page 1 of 4  

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