Datasheet > HL6331G

HL6331G

更新时间： 2024-01-21 16:16:34

品牌	Logo	应用领域
OPNEXT		半导体光电二极管激光二极管
页数	文件大小	规格书
4页	96K
描述
Low Operating Current Visible Laser Diode

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HL6331G 技术参数

生命周期：	Transferred	包装说明：	LD/G2, 3 PIN
Reach Compliance Code：	unknown	风险等级：	5.02
Is Samacsys：	N	光电设备类型：	LASER DIODE
Base Number Matches：	1

HL6331G 数据手册

HL6331G/32G

Low Operating Current Visible Laser Diode

ODE-208-032A (Z)

Rev.1

Oct. 21, 2005

Description

The HL6331G/32G are 0.63 µm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW) structure. They

are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.

Features

Package Type

• HL6331G/32G: G2

Internal Circuit

• HL6331G

Internal Circuit

• HL6332G

•

Visible light output: λp = 635 nm Typ

Single longitudinal mode

Optical output power: 10 mW CW

Low operating current : 55 mA Typ

Low Operating voltage: 2.4 V Max

Operating temperature : +60°C

TM mode oscillation

Absolute Maximum Ratings

(T_C= 25°C)

Item

Optical output power

LD reverse voltage

Symbol

Ratings

Unit

P_O

V_R(LD)

PD reverse voltage

Operating temperature

Storage temperature

V_R(PD)

Topr

Tstg

–10 to +60

–40 to +85

°C

Optical and Electrical Characteristics

(T_C= 25°C)

Item

Threshold current

Operating current

Operating voltage

Slope efficiency

Symbol

Ith

Min

—

Typ

Max

Unit

Test Conditions

—

I_OP

V_OP

ηs

—

P_O= 10 mW

—

2.2

0.65

2.4

0.90

0.40

mW/mA 6 (mW) / (I_(8mW)– I_(2mW))

Beam divergence

parallel to the junction

θ//

P_O= 10 mW

Beam divergence

perpendicular to the junction

θ⊥

Lasing wavelength

Monitor current

λp

630

635

640

I_S

0.08

0.15

0.30

P_O= 10 mW, V_R(PD)= 5 V

Rev.1 Oct. 21, 2005 page 1 of 4

12 3 4

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