5秒后页面跳转
HL6328MG PDF预览

HL6328MG

更新时间: 2024-02-02 01:11:23
品牌 Logo 应用领域
OPNEXT 半导体光电二极管激光二极管
页数 文件大小 规格书
4页 94K
描述
AlGaInP Laser Diodes

HL6328MG 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:LD/MG, 3 PINReach Compliance Code:unknown
风险等级:5.02最大正向电流:0.06 A
最大正向电压:2.4 VJESD-609代码:e0
安装特点:THROUGH HOLE MOUNT最高工作温度:50 °C
最低工作温度:-10 °C光电设备类型:LASER DIODE
峰值波长:635 nm半导体材料:AlGaInP
子类别:Laser Diodes表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

HL6328MG 数据手册

 浏览型号HL6328MG的Datasheet PDF文件第2页浏览型号HL6328MG的Datasheet PDF文件第3页浏览型号HL6328MG的Datasheet PDF文件第4页 
HL6327MG/28MG  
AlGaInP Laser Diodes  
ODE-208-031 (Z)  
Rev.0  
Jul. 01, 2005  
Description  
The HL6327MG/28MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are  
suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.  
Features  
Package Type  
HL6327MG/28MG: MG  
Internal Circuit  
HL6327MG  
Internal Circuit  
HL6328MG  
Visible light output  
Single longitudinal mode  
: 635 nm Typ  
1
3
1
3
Optical output power : 5 mW CW  
Low operating current : 40 mA Typ  
Low operating voltage : 2.4 V Max  
Operating temperature : +50°C  
TM mode oscillation  
LD  
PD  
PD  
LD  
2
2
Absolute Maximum Ratings  
(TC = 25°C)  
Item  
Optical output power  
LD reverse voltage  
Symbol  
Ratings  
Unit  
mW  
V
PO  
5
2
VR(LD)  
PD reverse voltage  
Operating temperature  
Storage temperature  
VR(PD)  
Topr  
Tstg  
30  
V
–10 to +50  
–40 to +85  
°C  
°C  
Optical and Electrical Characteristics  
(TC = 25°C)  
Item  
Threshold current  
Operating current  
Operating voltage  
Slope efficiency  
Symbol  
Ith  
IO  
Min  
Typ  
30  
40  
2.2  
0.5  
8
Max  
Unit  
mA  
mA  
V
Test Condition  
50  
60  
PO = 5 mW  
PO = 5 mW  
P
VOP  
ηs  
2.4  
0.8  
11  
0.3  
6
mW/mA 3 (mW) / (I(4mW) – I(1mW))  
Beam divergence  
parallel to the junction  
θ//  
°
PO = 5 mW  
PO = 5 mW  
PO = 5 mW  
Beam divergence  
perpendicular to the junction  
θ⊥  
25  
31  
37  
°
Lasing wavelength  
Monitor current  
λp  
630  
635  
640  
nm  
mA  
IS  
0.02  
0.07  
0.12  
PO = 5 mW, VR(PD) = 5 V  
Rev.0 Jul. 01, 2005 page 1 of 4  

与HL6328MG相关器件

型号 品牌 描述 获取价格 数据表
HL6331G HITACHI Low Operating Current Visible Laser Diode

获取价格

HL6331G OPNEXT Low Operating Current Visible Laser Diode

获取价格

HL6331G/32G ETC

获取价格

HL6332G HITACHI Low Operating Current Visible Laser Diode

获取价格

HL6332G OPNEXT Low Operating Current Visible Laser Diode

获取价格

HL6333MG OPNEXT Low Operating Current Visible Laser Diode

获取价格