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HL6325G PDF预览

HL6325G

更新时间: 2024-01-11 06:21:41
品牌 Logo 应用领域
OPNEXT 半导体光电二极管激光二极管
页数 文件大小 规格书
4页 95K
描述
AlGaInP Laser Diodes

HL6325G 技术参数

生命周期:Transferred包装说明:LD/G2, 3 PIN
Reach Compliance Code:unknown风险等级:5.02
Is Samacsys:N光电设备类型:LASER DIODE
Base Number Matches:1

HL6325G 数据手册

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HL6325G/26G  
AlGaInP Laser Diodes  
ODE-208-030 (Z)  
Rev.0  
Jul. 01, 2005  
Description  
The HL6325G/26G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are  
suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.  
Features  
Package Type  
HL6325G/26G: G2  
Internal Circuit  
HL6325G  
Internal Circuit  
HL6326G  
Visible light output  
Single longitudinal mode  
: 635 nm Typ  
1
3
1
3
Optical output power : 5 mW CW  
Low operating current : 40 mA Typ  
Low operating voltage: 2.4 V Max  
Operating temperature : +60°C  
TM mode oscillation  
LD  
PD  
PD  
LD  
2
2
Absolute Maximum Ratings  
(TC = 25°C)  
Item  
Optical output power  
Pulse optical output power  
PD reverse voltage  
Symbol  
Ratings  
Unit  
mW  
mW  
V
PO  
5
2
PO(pulse)  
VR(PD)  
Topr  
Tstg  
30  
Operating temperature  
Storage temperature  
–10 to +60  
–40 to +85  
°C  
°C  
Optical and Electrical Characteristics  
(TC = 25°C)  
Item  
Threshold current  
Operating current  
Operating voltage  
Slope efficiency  
Symbol  
Ith  
IO  
Min  
Typ  
Max  
50  
Unit  
mA  
mA  
V
Test Condition  
30  
40  
2.2  
0.5  
8
60  
PO = 5 mW  
PO = 5 mW  
P
VOP  
ηs  
2.4  
0.8  
11  
0.3  
6
mW/mA 3 (mW) / (I(4mW) – I(1mW))  
Beam divergence  
parallel to the junction  
θ//  
°
PO = 5 mW  
PO = 5 mW  
PO = 5 mW  
Beam divergence  
perpendicular to the junction  
θ⊥  
25  
31  
37  
°
Lasing wavelength  
Monitor current  
λp  
630  
635  
640  
nm  
mA  
IS  
0.05  
0.10  
0.25  
PO = 5 mW, VR(PD) = 5 V  
Rev.0 Jul. 01, 2005 page 1 of 4  

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