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HL6325G PDF预览
型号:
HL6325G
Datasheet下载:
HL6325G
HL6325G描述:
AlGaInP Laser Diodes
HL6325G应用:
半导体光电二极管激光二极管
文档页数/大小:
4页 / 95K
品牌Logo:
品牌名称:
OPNEXT [ OPNEXT. INC. ]

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HL6325G

应用: 半导体光电二极管激光二极管

文档: 4页 / 95K

品牌: OPNEXT

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生命周期
Transferred
IHS 制造商
RENESAS TECHNOLOGY CORP
包装说明
LD/G2, 3 PIN
Reach Compliance Code
unknown
风险等级
5.02
Is Samacsys
N
光电设备类型
LASER DIODE
Base Number Matches
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HL6325G/26G
AlGaInP Laser Diodes
Description
The HL6325G/26G are 0.63
µm
band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are
suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
ODE-208-030 (Z)
Rev.0
Jul. 01, 2005
Features
Visible light output
: 635 nm Typ
Single longitudinal mode
Optical output power : 5 mW CW
Low operating current : 40 mA Typ
Low operating voltage : 2.4 V Max
Operating temperature : +60°C
TM mode oscillation
Package Type
HL6325G/26G: G2
Internal Circuit
HL6325G
1
3
Internal Circuit
HL6326G
1
3
PD
LD
PD
LD
2
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Optical output power
Pulse optical output power
PD reverse voltage
Operating temperature
Storage temperature
Symbol
P
O
P
O(pulse)
V
R(PD)
Topr
Tstg
Ratings
5
2
30
–10 to +60
–40 to +85
Unit
mW
mW
V
°C
°C
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Threshold current
Operating current
Operating voltage
Slope efficiency
Beam divergence
parallel to the junction
Beam divergence
perpendicular to the junction
Lasing wavelength
Monitor current
Symbol
Ith
I
O
P
V
OP
ηs
θ//
θ⊥
λp
I
S
Min
0.3
6
25
630
0.05
Typ
30
40
2.2
0.5
8
31
635
0.10
Max
50
60
2.4
0.8
11
37
640
0.25
Unit
mA
mA
V
mW/mA
°
°
nm
mA
Test Condition
P
O
= 5 mW
P
O
= 5 mW
3 (mW) / (I
(4mW)
– I
(1mW)
)
P
O
= 5 mW
P
O
= 5 mW
P
O
= 5 mW
P
O
= 5 mW, V
R(PD)
= 5 V
Rev.0 Jul. 01, 2005 page 1 of 4

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