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HL6324MG PDF预览

HL6324MG

更新时间: 2024-01-09 22:53:04
品牌 Logo 应用领域
OPNEXT 半导体光电二极管激光二极管
页数 文件大小 规格书
4页 93K
描述
AlGaInP Laser Diodes

HL6324MG 技术参数

生命周期:Obsolete包装说明:LD/MG, 3 PIN
Reach Compliance Code:unknown风险等级:5.23
配置:SINGLE WITH BUILT-IN PHOTO DIODE最大正向电流:0.042 A
最大正向电压:2.7 V安装特点:THROUGH HOLE MOUNT
功能数量:1最高工作温度:50 °C
最低工作温度:-10 °C光电设备类型:LASER DIODE
标称输出功率:3 mW峰值波长:635 nm
半导体材料:AlGaInP形状:ROUND
尺寸:1.6 mm子类别:Laser Diodes
表面贴装:NO最大阈值电流:35 mA

HL6324MG 数据手册

 浏览型号HL6324MG的Datasheet PDF文件第2页浏览型号HL6324MG的Datasheet PDF文件第3页浏览型号HL6324MG的Datasheet PDF文件第4页 
HL6314MG/24MG  
AlGaInP Laser Diodes  
ODE-208-025 (Z)  
Rev.0  
Jul. 01, 2005  
Description  
The HL6314MG/24MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are  
suitable as light sources for laser pointers and optical equipment for amusement.  
Features  
Package Type  
HL6314MG/24MG: MG  
Internal Circuit  
HL6314MG  
Internal Circuit  
HL6324MG  
Visible light output: 635 nm Typ  
Single longitudinal mode  
Optical output power: 3 mW CW  
Low operating current: 30 mA Typ  
Low operating voltage: 2.7 V Max  
TM mode oscillation  
1
3
1
3
PD  
LD  
PD  
LD  
2
2
Absolute Maximum Ratings  
(TC = 25°C)  
Item  
Optical output power  
Pulse optical output power  
LD reverse voltage  
Symbol  
Ratings  
Unit  
mW  
mW  
V
PO  
3
PO(pulse)  
VR(LD)  
VR(PD)  
Topr  
5 *  
2
PD reverse voltage  
30  
V
Operating temperature  
Storage temperature  
–10 to +50  
–40 to +85  
°C  
Tstg  
°C  
Note: Pulse condition : Pulse width 1 µs , duty 50%  
Optical and Electrical Characteristics  
(TC = 25°C)  
Item  
Threshold current  
Operating current  
Operating voltage  
Symbol  
Ith  
Min  
6
Typ  
25  
30  
Max  
Unit  
mA  
mA  
V
Test Conditions  
35  
42  
2.7  
10  
IOP  
VOP  
θ//  
PO = 3 mW  
PO = 3 mW  
PO = 3 mW  
Beam divergence  
8
°
parallel to the junction  
Beam divergence  
θ⊥  
23  
30  
39  
°
PO = 3 mW  
perpendicular to the junction  
Astigmatism  
AS  
λp  
IS  
8
µm  
nm  
mA  
PO = 3 mW, NA = 0.55  
PO = 3 mW  
Lasing wavelength  
Monitor current  
630  
0.08  
635  
0.15  
640  
0.40  
PO = 3 mW, VR(PD) = 5 V  
Rev.0 Jul. 01, 2005 page 1 of 4  

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