HL6323MG
AlGaInP Laser Diodes
ODE-208-029 (Z)
Rev.0
Jul. 01, 2005
Description
The HL6323MG is a 0.63 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is
suitable as a longer distance operating range for laser markers and a higher speed for positioning control sensors. The
HL6323MG is packaged in the small can (φ5.6 mm), enabling end products to be kept small.
Features
Internal Circuit
Pakage Type
• HL6323MG: MG
•
•
•
•
•
High output power
Visible light output
Small package
TM mode oscillation
Single longitudinal mode
: 35 mW (CW)
: λp = 639 nm Typ
: φ5.6 mm
1
3
PD
LD
2
Absolute Maximum Ratings
(TC = 25°C)
Item
Optical output power
Pulse optical output power
LD reverse voltage
Symbol
Ratings
35 *1
Unit
mW
mW
V
PO
PO(pulse)
VR(LD)
VR(PD)
Topr
50 *2
2
PD reverse voltage
30
V
Operating temperature
Storage temperature
–10 to +50
–40 to +85
°C
Tstg
°C
Notes: 1. This value is not the same as the specification for long term reliability, such as lifetime.
2. Pulse condition : Pulse width pw = 100 ns , duty = 20%
Optical and Electrical Characteristics
(TC = 25°C)
Item
Threshold current
Slope efficiency
Operating current
Operating voltage
Symbol
Ith
Min
30
0.4
Typ
45
Max
65
Unit
Test Condition
mA
—
ηs
0.6
95
0.9
130
2.8
11
mW/mA 18(mW) / (I(24mW) – I(6mW))
IOP
VOP
θ//
mA
V
PO = 30 mW
PO = 30 mW
PO = 30 mW
2.3
8.5
Beam divergence parallel to
the junction
7
°
Beam divergence
perpendicular to the junction
θ⊥
26
30
34
°
PO = 30 mW
PO = 30 mW
Lasing wavelength
Monitor current
λp
635
639
642
nm
mA
IS
0.05
0.15
0.25
PO = 30 mW, VR(PD) = 5 V
Rev.0 Jul. 01, 2005 page 1 of 4