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HL6322G PDF预览
型号:
HL6322G
Datasheet下载:
HL6322G
HL6322G描述:
AlGaInP Laser Diodes
HL6322G应用:
半导体光电二极管激光二极管
文档页数/大小:
4页 / 95K
品牌Logo:
品牌名称:
OPNEXT [ OPNEXT. INC. ]

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HL6322G

应用: 半导体光电二极管激光二极管

文档: 4页 / 95K

品牌: OPNEXT

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  • HL6322G参数
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生命周期
Active
IHS 制造商
USHIO OPTO SEMICONDUCTORS INC
包装说明
LD/G2, 3 PIN
Reach Compliance Code
unknown
Factory Lead Time
12 weeks 6 days
风险等级
5.02
配置
SINGLE WITH BUILT-IN PHOTO DIODE
功能数量
1
最高工作温度
50 °C
最低工作温度
-10 °C
光电设备类型
LASER DIODE
标称输出功率
15 mW
峰值波长
635 nm
形状
ROUND
尺寸
2 mm
最大阈值电流
70 mA
Base Number Matches
1
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HL6321G/22G
AlGaInP Laser Diodes
Description
The HL6321G/22G are 0.63
µm
band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are
suitable as light sources for laser levelers and optical equipment for measurement.
ODE-208-028A (Z)
Rev.1
Oct. 24, 2006
Features
Visible light output: 635 nm Typ
Single longitudinal mode
Optical output power: 15 mW CW
Low operating current: 100 mA Max
Low operating voltage: 2.7 V Max
TM mode oscillation
Package Type
HL6321G/22G: G2
Internal Circuit
HL6321G
1
3
Internal Circuit
HL6322G
1
3
PD
LD
PD
LD
2
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Symbol
P
O
V
R(LD)
V
R(PD)
Topr
Tstg
Ratings
15
2
30
–10 to +50
–40 to +85
Unit
mW
V
V
°C
°C
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Threshold current
Operating current
Operating voltage
Slope efficiency
Beam divergence
parallel to the junction
Beam divergence
perpendicular to the junction
Lasing wavelength
Monitor current
Symbol
Ith
I
OP
V
OP
ηs
θ//
θ⊥
λp
I
S
Min
20
0.3
6
25
630
0.1
Typ
55
85
8
30
635
0.2
Max
70
100
2.7
0.7
11
36
640
0.4
Unit
mA
mA
V
mW/mA
°
°
nm
mA
Test Conditions
P
O
= 15 mW
P
O
= 15 mW
9 (mW) / (I
(12mW)
– I
(3mW)
)
P
O
= 15 mW
P
O
= 15 mW
P
O
= 15 mW
P
O
= 15 mW, V
R(PD)
= 5 V
Rev.1 Oct. 24, 2006 page 1 of 4

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