HL6319G/20G
AlGaInP Laser Diodes
ODE-208-027 (Z)
Rev.0
Jul. 01, 2005
Description
The HL6319G/20G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are
suitable as light sources for laser levelers and optical equipment for measurement.
Features
Package Type
• HL6319G/20G: G2
Internal Circuit
• HL6319G
Internal Circuit
• HL6320G
•
•
•
•
•
•
Visible light output: 635 nm Typ
Single longitudinal mode
Optical output power: 10 mW CW
Low operating current: 95 mA Max
Low operating voltage: 2.7 V Max
TM mode oscillation
1
3
1
3
PD
LD
PD
LD
2
2
Absolute Maximum Ratings
(TC = 25°C)
Item
Optical output power
LD reverse voltage
Symbol
Ratings
Unit
mW
V
PO
10
2
VR(LD)
PD reverse voltage
Operating temperature
Storage temperature
VR(PD)
Topr
Tstg
30
V
–10 to +50
–40 to +85
°C
°C
Optical and Electrical Characteristics
(TC = 25°C)
Item
Threshold current
Operating current
Operating voltage
Slope efficiency
Symbol
Ith
Min
20
—
Typ
50
70
—
Max
Unit
mA
mA
V
Test Conditions
75
95
—
IOP
VOP
ηs
PO = 10 mW
PO = 10 mW
—
2.7
0.7
11
0.3
5
0.5
8
mW/mA 6 (mW) / (I(8mW) – I(2mW))
Beam divergence
θ//
°
PO = 10 mW
parallel to the junction
Beam divergence
θ⊥
25
31
37
°
PO = 10 mW
perpendicular to the junction
Astigmatism
AS
λp
IS
—
5
—
µm
nm
mA
PO = 10 mW, NA = 0.55
PO = 10 mW
Lasing wavelength
Monitor current
625
0.05
635
0.17
640
0.30
PO = 10 mW, VR(PD) = 5 V
Rev.0 Jul. 01, 2005 page 1 of 4