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HL6316G PDF预览
型号:
HL6316G
Datasheet下载:
HL6316G
HL6316G描述:
AlGaInP Laser Diodes
HL6316G应用:
半导体光电二极管激光二极管
文档页数/大小:
4页 / 93K
品牌Logo:
品牌名称:
OPNEXT [ OPNEXT. INC. ]

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HL6316G

应用: 半导体光电二极管激光二极管

文档: 4页 / 93K

品牌: OPNEXT

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  • HL6316G参数
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生命周期
Transferred
包装说明
LD/G2, 3 PIN
Reach Compliance Code
compliant
风险等级
5.02
光电设备类型
LASER DIODE
Base Number Matches
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HL6316G
AlGaInP Laser Diodes
Description
The HL6316G is a 0.63
µm
band AlGaInP laser diodes with a multi-quantum well (MQW) structure. It is suitable as
light sources for laser pointers and optical equipment.
ODE-208-026 (Z)
Rev.0
Jul. 01, 2005
Features
Visible light output: 635 nm Typ
Single longitudinal mode
Optical output power: 3 mW CW
Low operating current: 30 mA Typ
Low operating voltage: 2.7 V Max
TM mode oscillation
Package Type
HL6316G: G2
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Optical output power
Pulse optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Symbol
P
O
P
O(pulse)
V
R(LD)
V
R(PD)
Topr
Ratings
3
5*
2
30
–10 to +50
–40 to +85
Unit
mW
mW
V
V
°C
°C
Storage temperature
Tstg
Note: Pulse condition : Pulse width
1
µs
, duty
50%
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Threshold current
Operating current
Operating voltage
Beam divergence
parallel to the junction
Beam divergence
perpendicular to the junction
Lasing wavelength
Monitor current
Symbol
Ith
I
OP
V
OP
θ//
θ⊥
λp
I
S
Min
6
23
630
0.1
Typ
25
30
8
30
635
0.3
Max
35
42
2.7
10
39
640
0.6
Unit
mA
mA
V
°
°
nm
mA
Test Conditions
P
O
= 3 mW
P
O
= 3 mW
P
O
= 3 mW
P
O
= 3 mW
P
O
= 3 mW
P
O
= 3 mW, V
R(PD)
= 5 V
Rev.0 Jul 01, 2005 page 1 of 4

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