Datasheet > HL6312G

HL6312G

更新时间： 2024-02-06 20:55:00

品牌	Logo	应用领域
OPNEXT		半导体光电二极管激光二极管
页数	文件大小	规格书
4页	93K
描述
AlGaInP Laser Diodes

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技术参数
数据手册

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HL6312G 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.58	配置：	SINGLE WITH BUILT-IN PHOTO DIODE
功能数量：	1	最高工作温度：	50 °C
最低工作温度：	-10 °C	光电设备类型：	LASER DIODE
标称输出功率：	5 mW	峰值波长：	638 nm
形状：	ROUND	尺寸：	2 mm
最大阈值电流：	70 mA	Base Number Matches：	1

HL6312G 数据手册

HL6312G/13G

AlGaInP Laser Diodes

ODE-208-017 (Z)

Rev.0

Jul. 01, 2005

Description

The HL6312G/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength

is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser levelers and various other types

of optical equipment. Hermetic sealing of the package achieves high reliability.

Features

Package Type

• HL6312G/13G: LD/G2

Internal Circuit

• HL6312G

Internal Circuit

• HL6313G

•

Visible light output: λp = 635 nm Typ

Single longitudinal mode

Optical output power: 5 mW CW

Low Operating voltage: 2.7 V Max

Built-in photodiode for monitoring laser output

TM mode oscillation

Absolute Maximum Ratings

(T_C= 25°C)

Item

Optical output power

Pulse optical output power

LD reverse voltage

Symbol

Ratings

Unit

P_O

P_O(pulse)

V_R(LD)

V_R(PD)

Topr

6 *

PD reverse voltage

Operating temperature

Storage temperature

–10 to +50

–40 to +85

°C

Tstg

°C

Note: Pulse condition : Pulse width ≤ 1 µs , duty ≤ 50%

Optical and Electrical Characteristics

(T_C= 25°C)

Item

Threshold current

Operating current

Operating voltage

Symbol

Ith

Min

—

Typ

—

Max

Unit

Test Conditions

2.7

—

I_OP

V_OP

θ//

P_O= 5 mW

Beam divergence

parallel to the junction

Beam divergence

θ⊥

P_O= 5 mW

perpendicular to the junction

Astigmatism

A_S

λp

I_S

—

625

0.2

—

640

0.8

µm

P_O= 5 mW, NA = 0.55

P_O= 5 mW

Lasing wavelength

Monitor current

635

0.4

P_O= 5 mW, V_R(PD)= 5 V

Rev.0 Jul. 01, 2005 page 1 of 4

12 3 4

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