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HE8811_06 PDF预览

HE8811_06

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
OPNEXT 二极管
页数 文件大小 规格书
4页 90K
描述
GaAlAs Infrared Emitting Diode

HE8811_06 数据手册

 浏览型号HE8811_06的Datasheet PDF文件第2页浏览型号HE8811_06的Datasheet PDF文件第3页浏览型号HE8811_06的Datasheet PDF文件第4页 
HE8811  
GaAlAs Infrared Emitting Diode  
ODE-208-051 (Z)  
Rev.0  
Oct. 30, 2006  
Description  
The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high  
output power and fast response make it suitable as a light source in measuring instruments and infrared-beam  
communication equipment.  
Features  
Package Type  
HE8811: SG1  
Internal Circuit  
1
High-frequency response  
High efficiency and high output power  
Broad radiation pattern  
2
Absolute Maximum Ratings  
(TC = 25°C)  
Item  
Forward current  
Symbol  
Ratings  
200  
Unit  
mA  
V
IF  
Reverse voltage  
VR  
3
Operating temperature  
Storage temperature  
Topr  
Tstg  
–20 to +60  
–40 to +90  
°C  
°C  
Optical and Electrical Characteristics  
(TC = 25°C)  
Item  
Optical output power  
Peak wavelength  
Spectral width  
Forward voltage  
Reverse current  
Capacitance  
Symbol  
PO  
Min  
20  
780  
Typ  
30  
820  
50  
10  
5
Max  
Unit  
Test Conditions  
IF = 150 mA  
mW  
nm  
nm  
V
λp  
∆λ  
VF  
IR  
900  
IF = 150 mA  
IF = 150 mA  
IF = 150 mA  
VR = 3 V  
2.5  
100  
µA  
pF  
ns  
Ct  
tr  
VR = 0 V, f = 1 MHz  
IF = 50 mA  
Rise time  
Fall time  
tf  
7
ns  
IF = 50 mA  
Rev.0 Oct. 30, 2006 page 1 of 4  

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