HE8811
GaAlAs Infrared Emitting Diode
ODE-208-051 (Z)
Rev.0
Oct. 30, 2006
Description
The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high
output power and fast response make it suitable as a light source in measuring instruments and infrared-beam
communication equipment.
Features
Package Type
• HE8811: SG1
Internal Circuit
1
•
•
•
High-frequency response
High efficiency and high output power
Broad radiation pattern
2
Absolute Maximum Ratings
(TC = 25°C)
Item
Forward current
Symbol
Ratings
200
Unit
mA
V
IF
Reverse voltage
VR
3
Operating temperature
Storage temperature
Topr
Tstg
–20 to +60
–40 to +90
°C
°C
Optical and Electrical Characteristics
(TC = 25°C)
Item
Optical output power
Peak wavelength
Spectral width
Forward voltage
Reverse current
Capacitance
Symbol
PO
Min
20
780
—
Typ
30
820
50
—
—
10
5
Max
—
Unit
Test Conditions
IF = 150 mA
mW
nm
nm
V
λp
∆λ
VF
IR
900
—
IF = 150 mA
IF = 150 mA
IF = 150 mA
VR = 3 V
—
2.5
100
—
—
µA
pF
ns
Ct
tr
—
VR = 0 V, f = 1 MHz
IF = 50 mA
Rise time
—
—
Fall time
tf
—
7
—
ns
IF = 50 mA
Rev.0 Oct. 30, 2006 page 1 of 4