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HE8807SG PDF预览

HE8807SG

更新时间: 2024-02-22 04:17:07
品牌 Logo 应用领域
OPNEXT 半导体二极管
页数 文件大小 规格书
5页 102K
描述
GaAlAs Infrared Emitting Diodes

HE8807SG 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownHTS代码:8541.40.20.00
风险等级:5.69其他特性:HIGH RELIABILITY
配置:SINGLE最大正向电流:0.2 A
JESD-609代码:e0功能数量:1
最高工作温度:85 °C最低工作温度:-20 °C
光电设备类型:INFRARED LED标称输出功率:17 mW
峰值波长:880 nm形状:ROUND
尺寸:4 mm端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

HE8807SG 数据手册

 浏览型号HE8807SG的Datasheet PDF文件第2页浏览型号HE8807SG的Datasheet PDF文件第3页浏览型号HE8807SG的Datasheet PDF文件第4页浏览型号HE8807SG的Datasheet PDF文件第5页 
HE8807SG/FL  
GaAlAs Infrared Emitting Diodes  
ODE-208-050 (Z)  
Rev.0  
Oct. 30, 2006  
Description  
The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm.  
Features  
Package Type  
HE8807SG: SG1  
Package Type  
HE8807FL: FL  
Internal Circuit  
1
High output, high efficiency  
Narrow spectral width  
Sharp radiation directivity (HE8807FL)  
Wide radiation directivity (HE8807SG)  
High reliability  
2
Absolute Maximum Ratings  
(TC = 25°C)  
Item  
Forward current  
Symbol  
Ratings  
Unit  
mA  
V
IF  
200  
3
Reverse voltage  
VR  
Operating temperature  
Storage temperature  
Topr  
Tstg  
–20 to +85  
°C  
–40 to +100  
°C  
Optical and Electrical Characteristics  
(TC = 25°C)  
Item  
Optical output power  
Symbol  
PO  
Min  
10  
0.5  
800  
Typ  
20  
Max  
Unit  
Test Conditions  
HE8807SG  
HE8807FL  
mW  
IF = 150 mA  
Pf *  
λp  
∆λ  
VF  
IR  
1.0  
880  
30  
IF = 20 mA  
Peak wavelength  
Spectral width  
Forward voltage  
Reverse current  
Capacitance  
Rise time  
900  
60  
nm  
nm  
V
IF = 150 mA  
IF = 150 mA  
IF = 150 mA  
VR = 3 V  
1.7  
2.3  
100  
µA  
pF  
ns  
ns  
Ct  
tr  
10  
VR = 0 V, f = 1 MHz  
IF = 50 mA  
20  
Fall time  
tf  
20  
IF = 50 mA  
Note: Pf specification: The optical output within 9 degrees of the acceptance angle.  
Rev.0 Oct. 30, 2006 page 1 of 5  

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