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HE8807SG PDF预览

HE8807SG - OPNEXT. INC.

半导体二极管
型号:
HE8807SG
Datasheet下载:
HE8807SG
HE8807SG描述:
GaAlAs Infrared Emitting Diodes
HE8807SG应用:
半导体二极管
文档页数/大小:
5页 / 102K
品牌Logo:
品牌名称:
OPNEXT [ OPNEXT. INC. ]

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HE8807SG

应用: 半导体二极管

文档: 5页 / 102K

品牌: OPNEXT

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  • HE8807SG参数
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是否Rohs认证
不符合
生命周期
Obsolete
Reach Compliance Code
unknown
HTS代码
8541.40.20.00
风险等级
5.69
其他特性
HIGH RELIABILITY
配置
SINGLE
最大正向电流
0.2 A
JESD-609代码
e0
功能数量
1
最高工作温度
85 °C
最低工作温度
-20 °C
光电设备类型
INFRARED LED
标称输出功率
17 mW
峰值波长
880 nm
形状
ROUND
尺寸
4 mm
端子面层
Tin/Lead (Sn/Pb)
Base Number Matches
1
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HE8807SG/FL
GaAlAs Infrared Emitting Diodes
Description
The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm.
ODE-208-050 (Z)
Rev.0
Oct. 30, 2006
Features
High output, high efficiency
Narrow spectral width
Sharp radiation directivity (HE8807FL)
Wide radiation directivity (HE8807SG)
High reliability
Package Type
HE8807SG: SG1
Package Type
HE8807FL: FL
Internal Circuit
1
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Forward current
Reverse voltage
Operating temperature
Storage temperature
I
F
V
R
Topr
Tstg
Symbol
Ratings
200
3
–20 to +85
–40 to +100
Unit
mA
V
°C
°C
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Optical output power
Peak wavelength
Spectral width
Forward voltage
Reverse current
Capacitance
Rise time
Fall time
HE8807SG
HE8807FL
Symbol
P
O
Pf
*
λp
∆λ
V
F
I
R
Ct
t
r
t
f
Min
10
0.5
800
Typ
20
1.0
880
30
1.7
10
20
20
Max
900
60
2.3
100
Unit
mW
nm
nm
V
µA
pF
ns
ns
Test Conditions
I
F
= 150 mA
I
F
= 20 mA
I
F
= 150 mA
I
F
= 150 mA
I
F
= 150 mA
V
R
= 3 V
V
R
= 0 V, f = 1 MHz
I
F
= 50 mA
I
F
= 50 mA
Note: Pf specification: The optical output within 9 degrees of the acceptance angle.
Rev.0 Oct. 30, 2006 page 1 of 5

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